Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T15:17:04.363Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling the GAS-Phase Chemistry of Silicon Carbide Formation

Published online by Cambridge University Press:  15 February 2011

Mark D. Allendorf  and
Thomas H. Osterheld
Mark D. Allendorf
Affiliation:
Sandia National Laboratories, Mail Stop 9052 Livermore, CA 94551–0969
Thomas H. Osterheld
Affiliation:
Sandia National Laboratories, Mail Stop 9052 Livermore, CA 94551–0969
Get access

Abstract

Methyltrichlorosilane (MTS) is a precursor commonly used in the production of silicon carbide for composites, protective coatings, and structural ceramics. Experiments suggest that MTS decomposes in the gas phase to produce a large number of species whose surface reactivity is expected to vary widely. In this work, we discuss the development of a gas-phase mechanism that describes the decomposition of MTS. Rate coefficients for the reactions were obtained from literature sources, theoretical methods, and comparisons with analogous reaction chemistry. Several unknown reaction rates were fit to experimental measurements of MTS decomposition. The results are used to predict the major reaction paths, identify reactions to which product concentrations are sensitive, and determine the rate-limiting step for MTS decomposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 363 , 1994 , 39
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Footnotes

*

Work supported by the Advanced Industrial Materials Program of the U.S. Dept. of Energy Office of Industrial Technologies.

References

1. Osterheld, T. H., Allendorf, M. D., Chemical Vapor Deposition of Refractory Metals and Ceramics III, edited by Lee, W. Y., Gallois, B. M., (Mater. Res. Soc. 363, Pittsburgh, PA, 1995), see paper in this volume.Google Scholar
2. Allendorf, M. D., Melius, C. F., J. Phys. Chem. 97, 720 (1993).Google Scholar
3. Benson, S. W., Thermochemical Kinetics, (J. Wiley and Sons, New York, 1976).Google Scholar
4. Osterheld, T. H., Allendorf, M. D., Melius, C. F., J. Phys. Chem. 98, 6995 (1994).Google Scholar
5. Gilbert, R. G., Smith, S. C., Theory of Unimolecular and Recombination Reactions. (Blackwell Scientific Publications, Oxford, 1990).Google Scholar
6. Baulch, D. L., Duxbury, J., Grant, S. J., Montague, D. C., J. Phys. Chem. Ref. Data 10, Supp. 1, (1981).Google Scholar
7. Miller, J. A., Melius, C. F., Combust. Flame 91, 21 (1992).Google Scholar
8. Warnatz, J., in Combustion Chemistry Gardiner, W. C. Jr., Eds. (Springer-Verlag, New York, 1984).Google Scholar
9. Papasouliotis, G. D., Sotirchos, S. V., J. Electrochem. Soc. 141, 1599 (1994).Google Scholar
10. Arthur, N. L., Bell, T. N., Rev. Chem. Intermediates 2, 37 (1978).Google Scholar
11. Quack, M., Troe, J., Ber. Bunsen Gesell. Phys. Chem. 81, 329 (1977).Google Scholar
12. Davidson, I. M. T., Matthews, J. I., J. Chem. Soc. Faraday Trans. 1 77, 2277 (1981).Google Scholar
13. Doncaster, A. M., Walsh, R. M., J. Chem. Soc. Faraday 176, 272–279 (1980).Google Scholar
14. Lutz, A. E., Kee, R. J., Miller, J. A., “SENKIN: A Fortran Program for Predicting Homogeneous Gas Phase Chemical Kinetics with Sensitivity Analysis,” Sandia National Laboratories, 1988, SAND87–8248.Google Scholar