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Modeling the Effect of Oxidation and Etching of Silicon Photonic Crystals

Published online by Cambridge University Press:  26 February 2011

Makhin Thitsa ,
Haider Ali ,
Feng Wu ,
Kurt M. Peters  and
Sacharia Albin
Makhin Thitsa
Affiliation:
[email protected], Old Dominion University, Electrical and Computer Engineering, 231 Kaufman Hall, Old Dominion University, Norfolk, VA, 23529, United States, 757 683 4967
Haider Ali
Affiliation:
[email protected], Old Dominion University, Norfolk, VA, 23529, United States
Feng Wu
Affiliation:
[email protected], Old Dominion University, Norfolk, VA, 23529, United States
Kurt M. Peters
Affiliation:
[email protected], Old Dominion University, Norfolk, VA, 23529, United States
Sacharia Albin
Affiliation:
[email protected], Old Dominion University, Norfolk, VA, 23529, United States
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Abstract

Tuning the band-gap of photonic crystals has been a challenge because there are few parameters that can be varied to modify the band structure. In this paper we modeled the effect of well controlled complementary metal oxide semiconductor (CMOS) compatible processing techniques, viz. oxidation and oxide etching, on the band-gap and mid-gap frequency of a silicon photonic crystal (PC). By adding silicon dioxide as the third dielectric, oxide thickness serves as a new parameter that influences the band structure. In the case of a PC of Si atoms in air, if silicon is etched to reduce the original atom radius from 0.28a (a = lattice constant) to 0.1a, the band-gap and mid-gap normalized frequencies increase from 0.1 to 1.6 and from 0.28 to 0.49 respectively. During oxidation, silicon is consumed to form silicon dioxide. Thus, if the Si atom of 0.4a radius is oxidized until it reaches 0.1a, the band-gap and mid-gap vary in the range of (0.1-1.5) and (0.28-0.41) respectively. When the oxide is etched back, the band-gap can be tuned in the range of (0.1-1.6) for a new mid-gap frequency in the range of (0.41-0.49). Results are also presented for a triangular lattice of air holes in silicon.

Keywords

optoelectronicSioxidation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 978: Symposium GG – Multiscale Modeling of Materials , 2006 , 0978-GG05-26
Copyright
Copyright © Materials Research Society 2007

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