Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-23T11:24:33.345Z Has data issue: false hasContentIssue false

Modeling of “Pad-in-a-Bottle”: A Novel Planarization Process Using Suspended Polymer Beads

Published online by Cambridge University Press:  17 July 2013

Wei Fan
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA
Joy Johnson
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA
Duane S. Boning
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA
Get access

Abstract

The “pad-in-a-bottle” (PIB) approach to planarization is a non-traditional chemical mechanical polishing (CMP) process in which slurry containing polymer beads is used. The approach is hypothesized to be able to perform polishing by mixing polymer beads with similar chemical and mechanical properties as pad asperities into the slurry to provide force application and polishing contacts, so that a traditional CMP pad is not needed. Pad-in-a-bottle could provide predictable and controllable mechanical contacts through bead size control, which could substantially reduce process variability. Pad-in-a-bottle also has the potential to reduce the CMP consumable cost. In this work, we propose a physical model to understand the behavior of the pad-in-a-bottle approach and estimate the relationship of applied pressure and material removal rate in this variant of CMP. Two specific cases of polymer bead formation are considered in our modeling work, bead packing and bead stacking. Model prediction shows that the two bead formation cases generate distinctly different polishing mechanisms: material removal is applied pressure driven in bead packing, but contact event driven in bead stacking. The physical model suggests that in future experiments or applications of pad-in-a-bottle, a polymer bead size distribution or shape variation may be needed to achieve efficient material removal.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

International Technology Roadmap for Semiconductors, 2011.Google Scholar
Huey, S, Chandrasekaran, B, Bennett, D, Tsai, S, Xu, K, Qian, J, Dhandapani, S, David, J, Swedek, B and Karuppiah, L, ECS Trans. 44, 543 (2012).CrossRefGoogle Scholar
Li, Y., Microelectronic Applications of Chemical Mechanical Planarization, (John Wiley & Sons, Hoboken, 2008), p. 456.Google Scholar
Sun, T., Zhuang, Y., Borucki, L. and Philipossian, A., Jpn. J. Appl. Phys. 49, 046501 (2010).Google Scholar
Sun, T., Zhuang, Y., Borucki, L. and Philipossian, A., Jpn. J. Appl. Phys. 49, 066501 (2010).Google Scholar
Fan, W., Boning, D., Zhuang, Y., Sampurno, Y., Philipossian, A., Moinpour, M. and Hooper, D., Proc. 2011 International Conference on Planarization/CMP Technology (ICPT), Seoul, Korea, 2011, pp. 325333.Google Scholar
Philipossian, A., presented at the 2012 SRC-GRC/SEMATECH Engineering Research Center for Environmentally Benign Semiconductor Manufacturing Annual Review Meeting, Tucson, AZ, 2012.Google Scholar
Borucki, L. and Sampurno, Y., patent pending WO2011/142764 (17 November,2011).Google Scholar
Park, K. H., Kim, H. J., Chang, O. M. and Jeong, H. D., J. Mater. Process. Technol. 187-188, 7376 (2007).CrossRefGoogle Scholar
Ugelstad, J., Mfutakamba, H. R., Mork, P. C., Ellingsen, T., Berge, A., Schmid, R., Holm, L., Jorgedal, A., Hansen, F. K. and Nustad, K., J. Polym. Sci. Pol. Sym. 72, 225240 (1985).CrossRefGoogle Scholar
Lu, Y., Tani, Y. and Kawata, K., CIRP Ann. Manuf. Technol. 51, 255258 (2002).CrossRefGoogle Scholar
Xu, X. F., Ma, B. X., Chen, F. and Peng, W., Adv. Mater. Res. 24-25, 155159 (2007).CrossRefGoogle Scholar
Johnson, K. L., Contact Mechanics, (Cambridge University Press, Cambridge, 1985), p. 93.CrossRefGoogle Scholar
Vasilev, B., Rzehak, R., Bott, S., Kucher, P. and Bartha, J. W., IEEE Trans. Semicond. Manuf. 24, 338347 (2011).CrossRefGoogle Scholar
Zhao, B. and Shi, F. G., IEDM '98. Technical Digest, San Francisco, CA, 1998, pp. 341344.Google Scholar
Zhao, Y. and Chang, L., Wear 252, 220226 (2002).CrossRefGoogle Scholar
Xia, X. and Ahmadi, G., Particul. Sci. Technol. 20, 187196 (2002).CrossRefGoogle Scholar
Liu, F. and Sutcliffe, M. P. F., Tribol. Lett. 25, 225236 (2007).CrossRefGoogle Scholar
Preston, F., J.Soc.Glass Technol. 11, 214256 (1927).Google Scholar
Zhao, B. and Shi, F. G., Electrochem. Solid St. Lett. 2, 145147 (1999).CrossRefGoogle Scholar
Boning, D. and Fan, W., Mater. Res. Soc. Symp. Proc. 1249, San Francisco, CA, 2010, p. E05–04.Google Scholar