Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-20T04:17:05.333Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling of Damage Evolution During Ion Implantation into Silicon: a Monte Carlo Approach

Published online by Cambridge University Press:  03 September 2012

S. Tian ,
M. Morris ,
S. J. Morris ,
B. Obradovic  and
A. F. Tasch
S. Tian
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712, USA
M. Morris
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712, USA
S. J. Morris
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712, USA
B. Obradovic
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712, USA
A. F. Tasch
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712, USA
Get access

Abstract

We present for the first time a physically based ion implantation damage model which successfully predicts both the as-implanted impurity range profiles and the damage profiles for a wide range of implant conditions for arsenic, boron, phosphorus, and BF2 implants into single-crystal (100) silicon. In addition, the amorphous layer thicknesses predicted by this damage model for high dose implants are also generally in excellent agreement with experiments. This damage model explicitly simulates the defect production and its subsequent evolution into the experimentally observable profiles for the first time. The microscopic mechanisms for damage evolution are further discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 83
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Robinson, M.T. and Torrens, I.M., Phys. Rev. B9, 5008 (1974).Google Scholar
[2] Sato, T., Yamakawa, H., Komiya, S., Kang, H.J., and Shimizu, R., Nucl. Instrnu. Meth. B21,456 (1987).Google Scholar
[3] Klein, K.M., Park, C., and Tasch, A.F., Nucl. Instrum. Meth. B59/60, 60 (1991).Google Scholar
[4] Jaraíz, M., Arias, J., Rubio, J.E., Bailón, L.A., and Barbolla, J., Nucl. Instnun. Meth. B80/81, 172 (1993).Google Scholar
[5] Yang, S.-H., Morris, S.J., Tian, S., Parab, K.B., and Tasch, A.F., IEEE Trans. Semicond. Man. 9,49 (1996).Google Scholar
[6] Yang, S.-H., Morris, S. J., Tian, S., Parab, K., and Tasch, A. F., to be published in J. Electrochem. Soc. Google Scholar
[7] Hummel, R.E., Xi, W., Holloway, P H., and Jones, K.A., J. Appl. Phys. 63, 2591 (1988).Google Scholar
[8] Caturla, M.-J., Diaz de la Rubia, T., Marqués, L.A., and Gilmer, G.H., unpublished.Google Scholar
[9] Larsen, K.K., Privitera, V., Coffa, S., Priolo, F., Campisano, S.U., and Camera, A., Phys. Rev. Lett. 76, 1493 (1996).Google Scholar