No CrossRef data available.
Article contents
Modeling Growth Directional Features of Silicon Nanowires Obtained Using SiO
Published online by Cambridge University Press: 01 February 2011
Abstract
Silicon nanowires (SiNW) grown using Si monoxide source materials are mainly oriented in the <112> direction, and some in the <110> direction. These directional features may be understood by postulating that growth of the SiNW is governed by lateral advancement of {111} plane layers that are stepped, and the role of particular kinds of dislocations providing perpetuate steps.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2002