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Modeling and Computer Simulation of the Thermal Field Induced by Ion Beam Irradiation of Bilayers

Published online by Cambridge University Press:  15 February 2011

Tosto Sebastiano
Tosto Sebastiano*
Affiliation:
ENEA C.R.E. Casaccia, via Anguillarese 301, 00060 Roma, Italy.
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Abstract

A 3D analytical model of calculation has been carried out to simulate the heat effects induced during ion beam assisted thin film deposition. The irradiation conditions enabling the growth of the film under steady conditions of temperature are discussed. Some results are presented to show the computer simulation of possible surface processing conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 215
Copyright
Copyright © Materials Research Society 1995

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References

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