Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-19T02:51:19.515Z Has data issue: false hasContentIssue false
  • English
  • Français

A Model of Chemical Mechanical Polishing

Published online by Cambridge University Press:  14 March 2011

Ed Paul
Ed Paul*
Affiliation:
Stockton College, Pomona NJ 08240 and NIST, Gaithersburg MD 20899, U.S.A
Get access

Abstract

A generic model is presented which explains the dependence of chemical mechanical polishing rates on the concentration of reacting chemicals and abrasives in the slurry. The predictions of this model are compared to data from the literature for tungsten CMP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 613: Symposium E – Chemical-Mechanical Polishing 2000 - Fundamentals… , 2000 , E1.4.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kaufman, F. B.; Thompson, D.B. et al. J. Electrochem. Soc. 138, 3460–3465 (1991)10.1149/1.2085434Google Scholar
2. Stein, D. J.; Hetherington, D. L.; Cecchi, J. L. J. Electrochem. Soc. 146, 376–381 (1999)10.1149/1.1391617Google Scholar
3. Bielmann, M.; Mahajan, U.; Singh, R. K. Electrochem. Solid-State Lett. 2, 401–403 (1999)10.1149/1.1390851Google Scholar
4. Jairath, R., Desai, M., Stell, M., and Tolles, R. Mater.Res.Soc.Proc. 337, 121–131 (1994)10.1557/PROC-337-121Google Scholar
5. Fauconnier, J.; Vennereau, P. Electrochim. Acta 23, 113–119 (1978)10.1016/0013-4686(78)80106-6Google Scholar