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A Model of Amorphous Silicon Layer Regrowth
Published online by Cambridge University Press: 25 February 2011
Abstract
A new model which combines heterogenous nucleation and growth process to explain the mechanism of the crystal regrowth of amorphous silicon, in contact with a Si single crystal substrate, is presented. This model explains the effects of substrate orientation and impurity concentration on the kinetics of crystal regrowth. A comparison of experimental results with the predictions of the model is also included.
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- Copyright © Materials Research Society 1985
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