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Model for Dopant and Impurity Segregation During Vapor Phase Growth

Published online by Cambridge University Press:  17 March 2011

Craig B. Arnold  and
Michael J. Aziz
Craig B. Arnold
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge MA 02138, USA
Michael J. Aziz
Affiliation:
Division of Engineering and Applied Sciences, Harvard University, Cambridge MA 02138, USA
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Abstract

We propose a new kinetic model for surface segregation during vapor phase growth that takes into account multiple mechanisms for segregation, including mechanisms for inter-layer exchange and surface diffusion. The resulting behavior of the segregation length shows temperature and velocity dependence, both of which have been observed in experiments. We compare our analytic model to experimental measurements for segregation of Phosphorus in Si(001), and we find an excellent agreement using realistic energies and pre-exponential factors for kinetic rate constants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P3.11
Copyright
Copyright © Materials Research Society 2001

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