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MOCVD-TiN Barrier Layers for ULSI Applications

Published online by Cambridge University Press:  25 February 2011

Ivo J. Raaijmakers ,
Raymond N. Vrtis ,
Jack Yang ,
Seshadri Ramaswami ,
Andre Lagendijk ,
David A. Roberts  and
Eliot K. Broadbent
Ivo J. Raaijmakers
Affiliation:
Novellus Systems, Inc., 81 Vista Montana, San Jose, CA 95134
Raymond N. Vrtis
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
Jack Yang
Affiliation:
Novellus Systems, Inc., 81 Vista Montana, San Jose, CA 95134
Seshadri Ramaswami
Affiliation:
Advanced Micro Devices, P.O. Box 3453, Sunnyvale, CA 94088–3000
Andre Lagendijk
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
David A. Roberts
Affiliation:
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009
Eliot K. Broadbent
Affiliation:
Novellus Systems, Inc., 81 Vista Montana, San Jose, CA 95134
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Abstract

Material properties are reported of high quality TiN thin films, deposited by a low temperature (400 – 450 C) and low pressure (10 Torr) metalorganic chemical vapor deposition process using tetrakis(diethylamino)Ti and ammonia. Layer resistivities of less than 200 μΩ cm are achieved in 300 to 500 A thick films. The carbon and oxygen content in the films is found to be low (<3% C, <0.5% O). Conformality of the films in small contact holes is sufficient for the films to be applicable as diffusion barrier and adhesion layers in integrated circuit manufacturing at the 0.25 μΩgeneration.

Integration of the MOCVD-TiN films in a Ti/TiN/Al-alloy metallization scheme is also reported. The diffusion barrier performance of the MOCVD-TiN layers is found to exceed that of PVD-TiN layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 99
Copyright
Copyright © Materials Research Society 1992

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References

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