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Mocvd of Cu on Teflon-AF and Alumina-Modified Teflon-AF

Published online by Cambridge University Press:  15 February 2011

D. Martini ,
R. Sutcliffe  and
J. Kelber
D. Martini
Affiliation:
Department of Chemistry, University of North Texas
R. Sutcliffe
Affiliation:
Department of Chemistry, University of North Texas
J. Kelber
Affiliation:
Department of Chemistry, University of North Texas
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Abstract

XPS studies of Cu(I)hfac(COD)adsorbed on clean and alumina-modified Teflon-AF surfaces show that on the clean polymer surface, Cu(0) formation occurs between 300 K and 600 K in UHV. The corresponding reduction is hindered by the presence of an alumina adlayer. In addition, the Cu Auger kinetic energies indicate the formation of nanoparticles on the alumina surface at both 300 K and 600 K. Annealing from 300 K to 600 K results in a ∼4 eV shift of the Cu(2p) transitions to higher binding energies. These facts indicate that the Cu precursor reacts with the alumina surface and results in limited mobility and hindered Cu(I) to Cu(0) reduction on the modified polymer surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 61
Copyright
Copyright © Materials Research Society 1997

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References

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