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MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode

Published online by Cambridge University Press:  10 February 2011

P. Kozodoy ,
A. Abare ,
R. K. Sink ,
M. Mack ,
S. Keller ,
S. P. DenBaars ,
U. K. Mishra  and
D. Steigerwald
P. Kozodoy
Affiliation:
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106.
A. Abare
Affiliation:
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106.
R. K. Sink
Affiliation:
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106.
M. Mack
Affiliation:
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106.
S. Keller
Affiliation:
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106.
S. P. DenBaars
Affiliation:
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106.
U. K. Mishra
Affiliation:
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106.
D. Steigerwald
Affiliation:
Optoelectronic Division, Hewlett-Packard, San Jose, California 95131–1008
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Abstract

The MOCVD growth of InGaN / GaN multiple quantum well (MQW) structures for optoelectronic applications has been investigated. The structural and optical properties of the layers have been characterized by x-ray diffraction and photoluminescence. The effect of barrier and well dimensions on the optical properties have been examined; highest emission intensity and narrowest linewidth were obtained with thin wells (20–30 Å) and thick barriers (greater than 50 Å). By incorporating an MQW structure as the active region in a GaN p-n diode, high-brightness light emitting diodes (LEDs) have been produced. Under a forward current of 20 raA, these devices emit 2.2 mW of power corresponding to an external quantum efficiency of 4.5%. The emission spectrum peaks at 445 nm and exhibits a narrow linewidth of 28 nm. Under pulsed high current conditions, output power as high as 53 mW was realized and the peak emission wavelength shifted to 430 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 481
Copyright
Copyright © Materials Research Society 1997

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References

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