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MOCVD growth of GaN on flat and misoriented A-plane sapphire substrates

Published online by Cambridge University Press:  21 March 2011

T. Someya ,
K. Hoshino  and
Y. Arakawa
T. Someya
Affiliation:
Research Center for Advanced Science and Technology, and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
K. Hoshino
Affiliation:
Research Center for Advanced Science and Technology, and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
Y. Arakawa
Affiliation:
Research Center for Advanced Science and Technology, and Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
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Abstract

We have grown high-quality GaN with smooth surface morphology on vicinal a-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The misorientation angles of vicinal a-plane sapphire substrates were changed systematically from 0° to 0.75°. Surface morphology and crystalline qualities are found to be very sensitive to misorientation angles of a-plane sapphire substrates and the misorientation angle was optimized to be 0.25°.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E3.4
Copyright
Copyright © Materials Research Society 2001

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References

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