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Mocvd Growth of CdTe and HgTe on GaAs in a Vertical, High-Speed, Rotating-Disc Reactor

Published online by Cambridge University Press:  28 February 2011

G.S. Tompa ,
C.R. Nelson ,
P.D. Reinert ,
M.A. Saracino ,
L.A. Terrill  and
P.C. Colter
G.S. Tompa
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873
C.R. Nelson
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873
P.D. Reinert
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873
M.A. Saracino
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873
L.A. Terrill
Affiliation:
EMCORE Corporation, 35 Elizabeth Avenue, Somerset, NJ 08873
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Abstract

The metalorganic chemical vapor deposition (MOCVD) growth of CdTe and HgTe on GaAs (111) and (100) substrates in a vertical, high-speed, rotating-disc reactor was investigated. A range of total reactor pressure, carrier gas flow rate, chemical concentrations, deposition temperature, and rotation rate have been investigated in an attempt to optimize growth conditions. Diisopropyltelluride (DIPTe) and Dimethylcadmium (DMCd) were used as growth precursors. Thickness uniformity varies less than +/- 1.5% over 50 mm diameter wafers. Films having FWHM X-ray rocking curves less than 90 arcsec were obtained on GaAs (111) substrates. The films have excellent surface morphology, exhibiting less than 5x104 cm-2 orange peel dents which are << 1 µm in size. An elemental mercury source was added to the growth system. Initial results for the growth of HgTe and HgCdTe will be discussed in this text.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 447
Copyright
Copyright © Materials Research Society 1989

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