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Misfit Strain Driven Phase Transformations in Epitaxial Barium Strontium Titanate Films

Published online by Cambridge University Press:  01 February 2011

Z.-G. Ban  and
S. P. Alpay
Z.-G. Ban
Affiliation:
Department of Metallurgy and Materials Engineering and Institute of Materials Science University of Connecticut, Storrs, CT 06269
S. P. Alpay
Affiliation:
Department of Metallurgy and Materials Engineering and Institute of Materials Science University of Connecticut, Storrs, CT 06269
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Abstract

We develop phase diagrams for single domain epitaxial barium strontium titanate films on cubic substrates as a function of the misfit strain based on a Landau-Devonshire phenomenological model similar to the one developed by Pertsev et al. [Phys. Rev. Lett. 80, 1988 (1998)]. Unusual ferroelectric phases that are not possible in single crystals and bulk ceramics are demonstrated in epitaxially constrained BST films. The misfit strain is correlated with the film thickness quantitatively by taking into account the formation of misfit dislocations that relieve epitaxial stresses during deposition. Theoretical estimation of the dielectric constant of (001) Ba0.7Sr0.3TiO3 and Ba0.6Sr0.4TiO3 films grown on Si, MgO, LaAlO3, and SrTiO3 substrates as a function of film thickness is provided. It is shown that the selection of the substrate and the film thickness can be chosen as design parameters to manipulate the internal stress level in the film to achieve enhanced dielectric response.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 718: Symposium D – Perovskite Materials , 2002 , D10.28
Copyright
Copyright © Materials Research Society 2002

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References

1. Summerfelt, S., (Ba, Sr)TiO3 Thin Films for DRAM's, in Thin Film Ferroelectric Materials and Devices, edited by Ramesh, R. (Kluwer Academic Publisher, Boston, 1997), p. 1.Google Scholar
2. Chang, W., Gilmore, C.M., Kim, W.-J., Pond, J.M., Kirchoefer, S.W., Qadri, S.B., Chrisey, D.B. and Horwitz, J.S., J. Appl. Phys. 87, 3044 (2000).Google Scholar
3. Canedy, C.L., Li, H., Alpay, S.P., Salamanca-Riba, L., Roytburd, A.L. and Ramesh, R., Appl. Phys. Lett. 77, 1695 (2000).Google Scholar
4. Li, H., Roytburd, A.L., Alpay, S.P., Tran, T.D., Salamanca-Riba, L. and Ramesh, R., Appl. Phys. Lett. 78, 2354 (2001).Google Scholar
5. Rossetti, G.A. Jr, Cross, L.E. and Kushida, K., Appl. Phys. Lett. 59, 2524 (1991).Google Scholar
6. Oh, S.H. and Jiang, H.M., Appl. Phys. Lett. 72, 1457 (1998).Google Scholar
7. Pertsev, N.A., Zembilgotov, A.G. and Tagantsev, A.K., Phys. Rev. Lett. 80, 1988 (1998).Google Scholar
8. , Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology, Vol. 16, edited by Hellwege, K.-H. and Hellwege, A.M. (Springler-Verlag, Berlin, 1981).Google Scholar
9. Pertsev, N.A., Tagantsev, A.K. and Setter, N., Phys. Rev.B 61, R825 (2000).Google Scholar
10. Yamada, T., J. Appl. Phys. 43, 328 (1972).Google Scholar
11. Hilton, A.D. and Ricketts, B.W., J. Phys.D: Appl. Phys. 29, 1321 (1996).Google Scholar
12. Lines, M.E. and Glass, A.M., Principles and Applications of Ferroelectrics and Related Materials (Clarendon, Oxford, 1977), p. 71.Google Scholar
13. Merve, J.H. van der, J. Appl. Phys. 34, 123 (1963).Google Scholar
14. Matthews, J.W. and Blakeslee, A.E., J. Crystal Growth 27, 118 (1974).Google Scholar