Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T15:17:28.758Z Has data issue: false hasContentIssue false
  • English
  • Français

Misfit Dislocation Nucleation and Interactions at GexSi1-x/Si Interfaces

Published online by Cambridge University Press:  28 February 2011

D.D. Perovic ,
G.C. Weatherly  and
D.C. Houghton
D.D. Perovic
Affiliation:
Dept. of Metallurgy and Materials Science, University of Toronto, Toronto, Canada M5S 1A4.
G.C. Weatherly
Affiliation:
Dept. of Metallurgy and Materials Science, University of Toronto, Toronto, Canada M5S 1A4.
D.C. Houghton
Affiliation:
Division of Physics, National Research Council of Canada, Ottawa, Canada K1A OR6.
Get access

Abstract

In the study of elastic strain relaxation in semiconductor heterostructures, a number of misfit dislocation generation mechanisms have been suggested to account for the high interfacial dislocation density observed in these almost defect-free crystals. Several MBE-grown GexSi1-x/Si heterostructures, both in the as-grown and annealed condition have been studied using transmission electron microscopy. The results indicate that some of the popular theories of dislocation generation are less important or not applicable based on both theoretical and experimental considerations. Specifically, it will be shown that: (i) heterogeneous sources play a dominant role in the nucleation mechanisms, (ii) the strain relaxation behaviour during MBE growth may be different from that observed in metastable structures annealed after growth and (iii) the Hagen-S trunk multiplication mechanism is inoperative under most conditions in this system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 65
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Tan, T.Y., Phil. Mag. A, 44, 101 (1981).Google Scholar
2People, R. and Bean, J.C., Appl. Phys. Lett. 47, 322 (1985); Appl. Phys. Lett. 49, 229 (1986).Google Scholar
3Matthews, J.W., Mader, S. and Light, T.B., J. Appl. Phys., 41, 3800 (1970).Google Scholar
4Matthews, J.W., J. Vac. Sci. Technol., 12, 126 (1975).Google Scholar
5Hirth, J.P. and Evans, A.G., J. Appl. Phys., 60, 2372 (1986).Google Scholar
6Tuppen, C.G., Gibbings, C.J. and Hockly, M., J. Cryst. Growth, 94, 392 (1989).Google Scholar
7Eaglesham, D.J., Kvam, E.P., Maher, D.M., Humphreys, C.J. and Bean, J.C., Phil. Mag. A., 59, 1059 (1989).Google Scholar
8Perovic, D.D., Weatherly, G.C., Baribeau, J.-M. and Houghton, D.C., (to appear in: Thin Solid Films, 182 , 1989).Google Scholar
9Kvam, E.P., Eaglesham, D.J., Maher, D.M., Humphreys, C.J., Bean, J.C., Green, G.S. and Tanner, B.K., Mat. Res. Soc. Symp. Proc., 104, 623 (1988).Google Scholar
10Freund, L.B., Bower, A. and Ramirez, J.C., Mat. Res. Soc. Symp. Proc., 130, 139 (1989).Google Scholar
11Rode, D.L., Phys. Stat. Sol.(a), 32, 425 (1975).Google Scholar
12Nabarro, F.R.N., Theory of Crystal Dislocations. (Clarendon Press, Oxford, 1967), p. 282.Google Scholar
13Chu, S.N.G., Macrander, A.T., Strege, K.E. and Johnston, W.D. Jr., J. Appl. Phys. 57, 249 (1985).Google Scholar
14Hull, R. and Bean, J.C., J. Vac. Sci. Technol. A, 7, 2580 (1989).Google Scholar
15Brown, L.M., Woolhouse, G.R. and Valdre, U., Phil. Mag., 17, 781 (1968).Google Scholar
16Bacon, D.J. and Crocker, A.G., Phil. Mag., 12, 195 (1965).Google Scholar
17Noble, D.B., Hoyt, J.L., Gibbons, J.F., Scott, M.P., Laderman, S.S., Rosner, S.J. and Kamins, T.I., (to appear in Appl. Phys. Lett., 1989).Google Scholar
18Hagen, W. and Strunk, H., Appl. Phys., 17, 85 (1978); H. Strunk, W. Hagen and E. Bauser, Appl. Phys., 18, 67 (1979).Google Scholar
19Rajan, K. and Denhoff, M., J. Appl. Phys., 62, 1710 (1987).Google Scholar
20Matthews, J.W., Phil. Mag., 13, 1307 (1966).Google Scholar
21Cherns, D., Mat. Res.Soc. Symp. Proc., 94, 99 (1987).Google Scholar
22Perovic, D.D., Weatherly, G.C. and Houghton, D.C. (to be published).Google Scholar
23Matthews, J.W., Thin Solid Films, 12, 243 (1972).Google Scholar