Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-20T01:00:20.880Z Has data issue: false hasContentIssue false
  • English
  • Français

Mim Capacitors with HfO2 and HfAlOx for Si RF and Analog Applications

Published online by Cambridge University Press:  01 February 2011

Xiongfei Yu ,
Chunxiang Zhu ,
Hang Hu ,
Albert Chin ,
M.F. Li ,
B.J. Cho ,
Dim-Lee Kwong ,
P.D. Foo  and
M.B. Yu
Xiongfei Yu
Affiliation:
SNDL, Dept of ECE, National University of Singapore, 10 Kent Ridge Crescent, 119260, Singapore, Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
Chunxiang Zhu
Affiliation:
SNDL, Dept of ECE, National University of Singapore, 10 Kent Ridge Crescent, 119260, Singapore, Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
Hang Hu
Affiliation:
SNDL, Dept of ECE, National University of Singapore, 10 Kent Ridge Crescent, 119260, Singapore, Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
Albert Chin
Affiliation:
Visiting Professor, on leave from National Chiao Tung University, Hsinchu, Taiwan, ROC
M.F. Li
Affiliation:
SNDL, Dept of ECE, National University of Singapore, 10 Kent Ridge Crescent, 119260, Singapore, Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
B.J. Cho
Affiliation:
SNDL, Dept of ECE, National University of Singapore, 10 Kent Ridge Crescent, 119260, Singapore, Phone: 65-6874 8930 Fax: 65-6779 1103 E-mail:[email protected]
Dim-Lee Kwong
Affiliation:
Dept of ECE, the University of Texas, Austin, TX78752, USA
P.D. Foo
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685, Singapore
M.B. Yu
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685, Singapore
Get access

Abstract

The MIM capacitors with HfO2 and HfAlOx are investigated for Si RF and analog applications. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. A high capacitance density of 13 fF/μm2with a low leakage current and a VCC of 607 ppm/V is obtained for 10 nm HfO2 MIM capacitor, which can meet the requirement of the ITRS roadmap by 2007 for silicon RF application. On the other hand, it was found that both the capacitance density and voltage coefficients of capacitance (VCC) values of the HfAlOx MIM capacitors decrease with increasing Al2O3 concentration. The results show that HfAlOx MIM capacitor with an Al2O3 mole fraction of 0.14 is optimized. It provides a high capacitance density of 3.5 fF/μm2 and a low VCC of μ140 ppm/V2. Also, small frequency dependence, low leakage current, and low loss tangent are obtained. Thus, the HfAlOx MIM capacitor with an Al2O3 mole ratio of 0.14 is very suitable for use in silicon analog applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E5.9
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Zurcher, P., Alluri, P., Chu, P., Duvallet, P., Happ, C., Henderson, R., Mendonca, J., Kim, M., Petras, M., Raymond, M., Remmel, T., Roberts, D., Steimle, B., Stipanuk, J., Straub, S., Sparks, T., Tarabbia, M., Thibieroz, H., and Miller, M., “Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies,” in Proc. of IEDM, pp. 153-156, 2000.Google Scholar
[2] Armacost, M., Augustin, A., Felsner, P., Feng, Y., Friese, G., Heidenreich, J., Hueckel, G., Prigge, O., and Stein, K., “A high reliability metal insulator metal capacitor for 0.18 μm copper technology,” in Proc. of IEDM, pp. 157–160, 2000.Google Scholar
[3] Babcock, J. A., Balster, S. G., Pinto, A., Dirnecker, C., Steinmann, P., Jumpertz, R., and El-Kareh, B., “Analog characterisitics of metal-insulator-metal capacitors using PECVD nitride dielectrics,” IEEE Electron Device Letters, vol. 22, No.5, pp. 230–232, 2001.Google Scholar
[4] The international Technology Roadmap for Semiconductors, Semiconductor Industry Association, 2001.Google Scholar
[5] Chen, S. B., Lai, C. H., Albert Chin, Hsieh, J. C., and Liu, J., “High-densityMIMcapacitors using Al2O3 and AlTiOx dielectrics,” IEEE Electron Device Letters, vol. 23, No.4, pp. 185–187, 2002.Google Scholar
[6] Wilk, G. D., Wallace, R. M., Anthony, J. M., “High-ê gate dielectrics: current status and material properties considerations,” Journal of Applied Physics, vol. 89, No.10, pp. 5243–5275, 2001.Google Scholar
[7] Lee, S. J., Luan, H. F., Lee, C. H., Jeon, T. S., Bai, W. P., Senzaki, Y., Roberts, D., and Kwong, D. L., “Performance and reliability of ultra thin CVD HfO2 gate dielectrics with dual poly-Si gate dielectrics,” in Proc. Symp. VLSI Technol., pp.133–134, 2001.Google Scholar
[8] Hu, Hang, Zhu, Chunxiang, Lu, YF, Li, MF, Cho, Byung Jin, Choi, WK, “A High Performance MIM Capacitor Using HfO2 Dielectrics”, IEEE Electron Device Letters, vol. 23, No.9, pp. 514–516, 2002.Google Scholar
[9] Kar-Roy, A., Hu, C., Racaneli, M., Compton, C. A., Kempf, P., Jolly, G., Sherman, P. N., Zheng, J., Zhang, Z., and Yin, A., “High density metal insulator metal capacitors using PECVD nitride for mixed signal and RF circuits,” in Proc. IITC, pp. 245–247, 1999.Google Scholar
[10] Wilk, G. D., Wallace, R. M., Anthony, J. M., “High-ê gate dielectrics: current status and material properties considerations,” Journal of Applied Physics, vol. 89, No.10, pp. 5243–5275, 2001.Google Scholar
[11] Chen, S. B., Lai, C. H., Chin, Albert, Hsieh, J. C., and Liu, J., “High-density MIM capacitors using Al2O3 and AlTiOx dielectrics,” IEEE Electron Device Letters, vol. 23, No.4, pp. 185–187, 2002.Google Scholar
[12] Takeuchi, I., van Dover, R.B., and Koinuma, H., “Combinatorial Synthesis and Evaluation of Functional Inorganic Materials Using Thin-Film Techniques”, MRS Bulletin, vol. 27, No.4, pp. 301–308, 2002.Google Scholar
[13] Yu, H. Y., Li, M. F., Cho, B. J., Yeo, C. C., Joo, M. S., Kwong, D.L., Pan, J. S., Ang, C. H. and Zhengm, J. Z. and Ramanathan, S., “Energy gap and band alignment for (HfO2)x(Al2O3)1-x on Si,” Applied Physics letters, vol. 81, No.2, pp. 376–378, 2002.Google Scholar
[14] Blonkowski, S., Regache, M., and Halimaoui, A., “Investigation and modeling of the electrical properties of metal-oxide-metal structures formed from chemical vapor deposited Ta2O5 ,” Journal of Applied Physics, vol. 90, No.3, pp. 1501–1508, 2001.Google Scholar
[15] Alers, G. B., Fleming, R. M., Wong, Y. H., Dennis, B. and Pinczuk, A., “Nitrogen plasma annealing for low temperature Ta2O5 films,” Applied Physics Letters, vol. 72, No.11, pp. 1308–1310, 1998.Google Scholar