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Microstructure of Si Films Deposited on Si(100) Surfaces by Remote Plasma-Enhanced Chemicalvapor Deposition, Rpecvd: Dependence on Process Pressure and Substrate Temperature

Published online by Cambridge University Press:  21 February 2011

S. Habermehl ,
S. S. He ,
Y. L. Chen  and
G. Lucovsky
S. Habermehl
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer ScienceNorth Carolina State University, Raleigh, NC 27695-8202
S. S. He
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer ScienceNorth Carolina State University, Raleigh, NC 27695-8202
Y. L. Chen
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer ScienceNorth Carolina State University, Raleigh, NC 27695-8202
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, and Electrical and Computer ScienceNorth Carolina State University, Raleigh, NC 27695-8202
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Abstract

The microstructure of Si thin films, deposited on in-situ cleaned Si(100) surfaces by remote plasma-enhanced chemical-vapor deposition (RPECVD), is dependent on the process pressure, substrate temperature and H2 flow rate. Surface characterization by on-line low energy electron diffraction, LEED, has been used to detect changes in the character of the deposited films which can either be amorphous, microcrystalline or crystalline, hereafter designated as a-Si, Sμc-Si, and c-Si, respectively. We have used these results to generate phase diagrams for the Si microstructure as a function of the process pressure and substrate temperature, including the flow rate of H2 as an additional deposition parameter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 379
Copyright
Copyright © Materials Research Society 1993

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References

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