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Microstructure of Polycrystalline Sic Containing Excess Si after Neutron Irradiation

Published online by Cambridge University Press:  15 February 2011

S.D. Harrison  and
J.C. Corelli
S.D. Harrison
Affiliation:
Dept. Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12181 USA
J.C. Corelli
Affiliation:
Dept. Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12181 USA
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Abstract

The microstructure of commercially available reactionbonded polycrystalline SiC containing 8–10 wt% excess silicon was studied after irradiation by reactor neutrons uitlizing transmission electron microscopy (TEM) and scanning electron microscopy (SEM). For TEM studies on samples irradiated below 473°K we observe dislocation tangles near grain boundaries or impurities plus isolated dislocations throughout the remainder of the grain, whereas for irradiation temperatures of ≈3730°K the material exhibits copious quantities of “black spot” defects (2–5nm size) and a lower concentration of tangles than 473°K irradiation. The SEM studies of surfaces of samples fractured at 1473°K indicate that the mode of fracture is predominantly transgranular.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 527
Copyright
Copyright © Materials Research Society 1981

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References

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