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Microstructure of Passivated Al-Cu and Al-Si-Cu Conductor Lines: Interaction of Precipitates, Defects and Mechanical Stresses

Published online by Cambridge University Press:  15 February 2011

A. G. Dirks
A. G. Dirks*
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
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Abstract

In this paper the results of our investigations of passivated, narrow lines of both Al-Cu and Al-Si-Cu (0.4 at.% Cu, 1.0 at.% Si) by transmission electron microscopy will be presented. Thin alloy films have been deposited on either oxide or refractory-metal films. During the standard anneal treatment of 0.5 h at 400 °C the atomic mobility is relatively high. At this temperature the binary Al-Cu films are one-phase alloys. Depending on the cooling rate, transformation occurs into a two-phase mixture of (initially) finely distributed, Cu-enriched particles and Al. The precipitates eventually form the equilibrium θ-Al2Cu phase, which tends to form large conglomerates upon further annealing. In contrast, the ternary Al-Si-Cu films are two-phase alloys already at 400 °C: at this temperature Si precipitates are pre:sent in the Al matrix, whereas the onset of Cu precipitation is not far below this temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 201
Copyright
Copyright © Materials Research Society 1996

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