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Microstructure Evolution of Epitaxial (Ba, Sr) TiO3/ (001) HgO Thin Films

Published online by Cambridge University Press:  15 February 2011

V.A. Alyoshin ,
E.V. Sviridov ,
V.I.M. Hukhortov ,
I.H. Zakharchenko  and
V.P. Dudkevich
V.A. Alyoshin
Affiliation:
Institute of Physics, Rostov State University, 194 Stachki ave., Rostov-on-Don, 344104 Russia
E.V. Sviridov
Affiliation:
Institute of Physics, Rostov State University, 194 Stachki ave., Rostov-on-Don, 344104 Russia
V.I.M. Hukhortov
Affiliation:
Institute of Physics, Rostov State University, 194 Stachki ave., Rostov-on-Don, 344104 Russia
I.H. Zakharchenko
Affiliation:
Institute of Physics, Rostov State University, 194 Stachki ave., Rostov-on-Don, 344104 Russia
V.P. Dudkevich
Affiliation:
Institute of Physics, Rostov State University, 194 Stachki ave., Rostov-on-Don, 344104 Russia
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Abstract

Surface and cross-section relief evolution of ferroelectric epitaxial (Ba,Sr)TiO3 films rf-sputtered on (001) HgO crystal cle-avage surface versus the oxygen worKing gas pressure P and subst-rate temperature T were studied. Specific features of both three-dimensional and two-dimensional epitaxy mechanisms corresponding to various deposition conditions were revealed. Difference between low and high P-T-value 3D epitaxy was established. The deposition of films with mirror-smooth surfaces and perfect interfaces is shown to be possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 501
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Surowiak, Z., Hikitin, Y., Biryukov, S., Golovko, Y., Hukhortov, V. and Dudkevich, V.. Thin Solid Films. 208, 76 (1992)Google Scholar