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Microstructure Effects in Hot-wire Deposited Undoped Microcrystalline Silicon Films

Published online by Cambridge University Press:  01 February 2011

Wolfhard Beyer ,
Reinhard Carius ,
Dorothea Lennartz ,
Lars Niessen  and
Frank Pennartz
Wolfhard Beyer
Affiliation:
[email protected], Forschungszentrum Jülich GmbH, IEF5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany, 492461612925, 492461613735
Reinhard Carius
Affiliation:
[email protected], Forschungszentrum Jülich GmbH, IEF5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany
Dorothea Lennartz
Affiliation:
[email protected], Forschungszentrum Jülich GmbH, IEF5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany
Lars Niessen
Affiliation:
[email protected], Forschungszentrum Jülich GmbH, IEF5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany
Frank Pennartz
Affiliation:
[email protected], Forschungszentrum Jülich GmbH, IEF5 Photovoltaik, Leo Brandt Strasse, Jülich, 52425, Germany
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Abstract

The microstructure of hot-wire microcrystalline silicon films prepared at a wide range of deposition conditions was characterized by both the microstructure parameter from infrared absorption data (analyzing the Si-H stretching modes) and the effusion spectra of (low dose) implanted He and Ne. Parameter ranges leading to the growth of a dense material are identified. A (relatively) high silane flow at rather high filament temperature is found to result in a dense material at high deposition rate. The microstructure data obtained by the two microstructure characterization methods are found to be largely correlated.

Keywords

microstructurechemical vapor deposition (CVD) (deposition)infrared (IR) spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A06-12
Copyright
Copyright © Materials Research Society 2008

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References

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