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Microstructure and Tribological Properties OF Co-Cr thin Films Deposited by Facing Targets Sputtering and Magnetron Sputtering Methods

Published online by Cambridge University Press:  22 February 2011

Sadao Kadokura
Affiliation:
Teijin Ltd., Advanced Thin Film Research Labs, Tokyo, Japan
Masahiko Naoe
Affiliation:
Tokyo Institute ot Technology, Department of Physical Electronics, Tokyo, Japan
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Abstract

The tribological properties and the slid surface profiles of Co-Cr thin films deposited by Facing Targets sputtering and Magnetron sputtering methods were investigated in regard to the durability of flexible disks. Co-Cr thin films with columnless microstructure and homogeneously packed particles were much tougher than ones with columnar microstructure for tribological test. The Co-Cr films deposited by conventional Magnetron sputtering method revealed typically columnar structure, while ones deposited by Facing Target sputtering method did columnless microstructure. This indicates probably homogeneous distribution of strong bonding forces between grain boundaries throughout the films, because no brittle fracture was observed even after the delamination between a plastic substrate and the CoOx/ Co-Cr / Ni-Fe triple layers took place by application of excess stresses. It was found that difference in morphology of Co-Cr thin film between Facing Target sputtering and conventional Magnetron sputtering methods was much significant.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Iwasaki, S., Nakamura, Y. and Ouchi, K.; IEEE Trans. Mag. MAG- 15, pp. 14561458 (1979)Google Scholar
2. Sugita, R. and Kobayashi, F.; IEEE Trans. Mag, MAG-17, pp. 31723174 (1981)Google Scholar
3. Kadokura, S. and Naoe, M.; lEEETrans. Mag. MAG- 18, pp. 11131115 (1982)Google Scholar
4. Sagoi, M., Nishikawa, R. and Suzuki, T.; IEEE Trans. Mag. MAG- 20, pp. 20192024 (1984)Google Scholar
5. Kadokura, S., Kamei, K., Teranishi, K. and Sobajima, S.; IEEE Trans. Mag. MAG- 23, pp. 24042406 (1987)Google Scholar
6. Furuya, N. and Nakayama, Y.; IEEE Trans. Mag. MAG-23, pp. 24012403 (1987)Google Scholar
7. Yamaura, M., Yatabe, T., Matsuzawa, H., Kadokura, S. and Sobajima, S.; IEEE Trans. Mag. MAG- 22, pp. 349351 (1986)Google Scholar
8. Tomie, T., Ogasawara, M., Kato, Y. and Ouchi, I.; Jpn. J. Appl. Phys. 27, 10. pp. 18901894 (1988)Google Scholar
9. Hoffman, D. H.; J. Vac. Soc. Technol. A3(3), pp. 561566 (1985)Google Scholar
10. Rossinagel, S. M.; J. Vac.Soc. Technol. A6(1), pp. 1924 (1988)Google Scholar
11. Mayer, M., Ludwig, R., Kastner, K., Kukla, R., Haberkom, B. and Hitzfeld, M.; IEEE Trans. Mag. MAG- 23, pp. 20492051 (1987)Google Scholar
12. Mattox, D. M.; Jpn. J. Appl. Phys. suppl. 2, Pt. 1, pp. 443450 (1974)Google Scholar