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Microstructure and Thermal Stability of Transition Metal Nitrides and Borides on GaN

Published online by Cambridge University Press:  15 March 2011

Jacek Jasiński ,
Eliana Kamińska ,
Anna Piotrowska ,
Adam Barcz  and
Marcin Zieliński
Jacek Jasiński
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA Institute of Experimental Physics, Warsaw University, Hoza 69, Warsaw, Poland
Eliana Kamińska
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, Warsaw, Poland
Anna Piotrowska
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, Warsaw, Poland
Adam Barcz
Affiliation:
Institute of Electron Technology, Al. Lotnikow 46, Warsaw, Poland Institute of Physics, PAS, Al. Lotnikow 46, Warsaw, Poland
Marcin Zieliński
Affiliation:
Institute of Physics, PAS, Al. Lotnikow 46, Warsaw, Poland
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Abstract

Microstructure and thermal stability of ZrN/ZrB2 bilayer deposited on GaN have been studied using transmission electron microscopy methods (TEM) and secondary ion mass spectrometry (SIMS). It has been demonstrated that annealing of the contact structure at 1100°C in N2 atmosphere does not lead to any observable metal/semiconductor interaction. In contrast, a failure of the integrity of ZrN/ZrB2 metallization at 800°C, when the heat treatment is performed in O2 ambient has been observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.34.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Smith, L., Davis, R. F., Kim, M. J., Carpenter, R. W., Huang, Y., J. Mater. Sci. 11, 2257 (1996).Google Scholar
2. Cole, M. W., Eckart, D. W., Han, W. Y., Pfeffer, R. L., Monahan, T., Ren, F., Yuan, C., Stall, R. A., Pearton, S. J., Li, Y., Lu, Y., J. Appl. Phys. 80, 278 (1996).Google Scholar
3. Shiojima, K., McInturff, D. T., Woodall, J. M., Grudowski, P. A., Eiting, C. J., Dupuis, R. D., J. Electron. Mat. 28, 228 (1999).Google Scholar
4. Guo, J. D., Pan, F. M., Feng, M. S., Guo, R. J., Chou, P. F., Chang, C.Y., J. Appl. Phys. 80, 2686 (1996).Google Scholar
5. Duxtad, K. J., Haller, E. E., Yu, K. M., Hirsh, M. T., Imler, W. M., Steigerwald, D. A., Ponce, F. A., Romano, L. T., Mat. Res. Soc. Symp. Proc. Vol.449, 1049 (1997).Google Scholar
6. Kaminska, E., Piotrowska, A., Guziewicz, M., Kasjaniuk, S., Barcz, A., Dynowska, E., Bremser, M. D., Nam, O. H., Davis, R. F., Mat. Res. Soc. Symp. Proc. Vol.449, 1055 (1997).Google Scholar
7. Koide, Y., Maeda, T., Kawakami, T., Fujita, S., Uemura, T., Shibata, N., Murakami, M., J. Electron. Mat. 28, 341 (1999).Google Scholar
8. Ho, J. K., Jong, C. S., Chiu, C. C., Huang, C. N., Chen, C. Y., Shih, K. K., Appl. Phys. Lett. 74, 1275 (1999).Google Scholar