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Microstructure and the Urbach Edge in Glow Discharge Deposited a-SiC:H

Published online by Cambridge University Press:  26 February 2011

A. H. Mahan ,
A. Mascarenhas ,
D. L. Williamson  and
R. S. Crandall
A. H. Mahan
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
A. Mascarenhas
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
D. L. Williamson
Affiliation:
Colorado School of Mines, Golden, CO 80401
R. S. Crandall
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
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Abstract

Photothermal deflection spectroscopy, infrared, and Raman measurements are presented for a series of a-SiC:H samples containing different amounts of microstructure. The Urbach edge is seen to widen systematically as the film microstructure increases, but the width of the Raman transverse optical mode remains unchanged. We argue that the increase in Urbach edge width with increasing C content is due entirely to the increase in microstructure. In addition, from the invariance of the Raman measurements with increasing microstructure and the assumed sensitivity of the Raman technique to surface states on the interior surfaces of these microstructural features, we are able to place lower limits on the size of these features. Such sizes are corroborated by preliminary small angle xray scattering measurements on identically prepared samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 641
Copyright
Copyright © Materials Research Society 1988

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References

1. Anderson, D. A. and Spear, W. E., Phil Mag. 35, 1 (1977).CrossRefGoogle Scholar
2. Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H., and Hamakawa, Y., J. Appl. Phys. 53, 5273 (1982).Google Scholar
3. Kuwano, Y., Ohnishi, M., Nishiwaki, H., Tsuda, S., Fukatsu, T., Enomoto, K., Nakashima, Y., and Tarui, H., 16th IEEE PV Spec. Conf., San Diego, CA (IEEE, New York, 1982), p. 1331.Google Scholar
4. Hollingsworth, R. E., Bhat, P. K., and Madan, A., 19th IEEEE PV Spec. Conf., New Orleans (IEEE, New York, 1987), p. 684.Google Scholar
5. Fieselmann, B., Milligan, M., Wilczynski, A., Pickens, J., and Dickson, C. R., 19th IEEE PV Spec. Conf., New Orleans (IEEE, New York, 1987), p. 1510.Google Scholar
6. Beyer, W., Wagner, H., and Finger, F., J. Non-Cryst. Solids 77–78, 857 91985).Google Scholar
7. Mahan, A. H., Raboisson, P., Williamson, D. L., and Tsu, R., Solar Cells 21, 117 (1987).CrossRefGoogle Scholar
8. Mahan, A. H., Raboisson, P., and Tsu, R., Appl. Phys. Lett. 50, 335 (1987).CrossRefGoogle Scholar
9. Mahan, A. H., Menna, P., and Tsu, R., Appl. Phys. Lett. 51, 1167 (1987).Google Scholar
10. von Roedern, B., Mahan, A. H., Williamson, D. L., and Madan, A., J. Non- Cryst. Solids 106, 13 (1984).Google Scholar
11. Mahan, A. H., Raboisson, P., Menna, P., and Tsu, R., Mat. Res. Soc. Symp. 95, 361 (1987).Google Scholar
12. Menna, P., Mahan, A. H., and Tsu, R., 19th IEEE PV Spec. Conf., New Orleans (IEEE, New York, 1987), p.Google Scholar
13. Cody, G. D., Tiedje, T., Abeles, B., Brooks, B., and Goldstein, Y., Phys. Rev. Lett. 47, 1480 (1982).CrossRefGoogle Scholar
14. Skumanich, A., Frova, A., and Amer, N. M., Solid State Commun. 54, 597 (1985).Google Scholar
15. Ichimura, T., Hama, T., Ihara, T., Ohsawa, M., Sakai, H., and Uchida, Y., 18th IEEE PV Spec. Conf., Las Vegas (IEEE, New York, 1985), p. 1495.Google Scholar
16. Yamasaki, S., Phil. Mag. B 56, 79 (1987).Google Scholar
17. Beeman, D., Tsu, R., and Thorpe, M. F., Phys. Rev. B32, 874 (1985).Google Scholar
18. Hishikawa, Y., Wantanabe, K., Tsuda, S., Ohnishi, M., and Kuwano, Y., Jpn. Appl. Phys. 24, 385 (1985).Google Scholar
19. Morimoto, A., Oozora, S., Kumeda, M., and Shimizu, T., Solid State Commun. 47, 773 (1983). We confine our comparison to films with C contents <22 at.%, which encompasses the range of C contents of the present samples.CrossRefGoogle Scholar
20. Aspnes, D.E., SPIE 276, 188 (1981).Google Scholar
21. Sakurai, T. and Hagstrum, H.D., Phys. Rev. B 14, 1593 (1976).Google Scholar