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Microstructure and Optoelectronic Properties of CdSe-Thin Films

Published online by Cambridge University Press:  10 February 2011

U. Klement  and
F. Ernst
U. Klement
Affiliation:
Max-Planck-Institut für Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany
F. Ernst
Affiliation:
Max-Planck-Institut für Metallforschung, Seestrasse 92, 70174 Stuttgart, Germany
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Abstract

CdSe appears to be a promising material to replace amorphous hydrogenated silicon as the photosensitive part in the retina of the “Electronic Eye”, a camera based on thin film technique. We have investigated the influence of post-depositional annealing treatments with respect to the optimization of the photoconductive properties. TEM-, AFM- and XPS-measurements on CdSe thin films are reported. The formation of an oxide could not be detected by XPS-depth profiling of films annealed in air but chemisorption of oxygen is expected at the intergrain boundaries. Hence, high potential barriers for electron transport will be introduced. Under illumination, trapping of photo-generated holes will neutralize the charge at the intergrain boundaries leading to improved electric properties. However, the homogeneity of the photoconductive properties in CdSe is not yet satisfying. The formation of swellings and holes on the sample surface, found by AFM-measurements, can perhaps explain the inhomogeneity of the photoconductive properties. Using Si wafers as substrate material no improvement in texturing could be reached, since an amorphous CdSe-interlayer is formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 131
Copyright
Copyright © Materials Research Society 1997

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References

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