Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T15:25:31.011Z Has data issue: false hasContentIssue false

The Microstructure and Nanoindentation Behaviour of TiN/NbN Multilayers

Published online by Cambridge University Press:  10 February 2011

J. M. Molina-Aldareguia
Affiliation:
Dept of Materials Science and Metallurgy, University of Cambridge, CB2 3QZ, UK
S. J. Lloyd
Affiliation:
Dept of Materials Science and Metallurgy, University of Cambridge, CB2 3QZ, UK
Z. H. Barber
Affiliation:
Dept of Materials Science and Metallurgy, University of Cambridge, CB2 3QZ, UK
M. G. Blamire
Affiliation:
Dept of Materials Science and Metallurgy, University of Cambridge, CB2 3QZ, UK
W. J. Clegg
Affiliation:
Dept of Materials Science and Metallurgy, University of Cambridge, CB2 3QZ, UK
Get access

Abstract

TiN/NbN multilayers and TiN monolithic films have been grown by UHV reactive magnetron sputter deposition on MgO single crystals. The hardness has been measured by nanoindentation and the as-deposited and deformed structures studied in cross-section using transmission electron microscopy. It has been found that initially the multilayers grow epitaxially with the substrate. However, once the overall film thickness has reached ∼300 nm, epitaxial growth ceases. No increase in hardness with respect to monolithic films of the multilayer components is observed in these multilayers. Experiments on monolithic films of TiN show that the same loss of epitaxy occurs, leading to a reduction in the hardness of the films, and that this change in growth morphology is triggered by the internal stresses induced within the films during deposition.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Barnett, S.A. and Shinn, M., Annu. Rev. Matter. Sci., 24, p. 481 (1994)Google Scholar
2. Chu, X. and Barnett, S.A., J. Appl. Physics, 77(9), p. 4403 (1995)Google Scholar
3. Barber, Z. H., Tricker, D.M., and Blamire, M.G., IEEE Trans. Appl. Supercon., 5, p. 2314 (1995)Google Scholar
4. Oliver, W. C. and Pharr, G.M., J. Mater. Research, 7(6), p. 1564 (1992)Google Scholar
5. Lloyd, S. J., Pitchford, J. E., Molina-Aldareguia, J.M., Barber, Z. H., Blamire, M. G. and Clegg, W.°J.°, Microsc. Microanal. 5 (Suppl 2), p. 776 (1999).Google Scholar
6. 1997 JCPDS-InternationalC entref or Diffraction Data PCPDFWIN. 1997.Google Scholar
7. Nix, W. D., Metallurgical Transactions A, 20, p. 2217 (1989)Google Scholar
8. Kim, J. O., Achembach, J. D., Mirkarimi, P. B., Shin, M. and Barnett, S. A.., J. Appl. Physics, 72(5), p. 1805 (1992)Google Scholar
9. Greene, J. E., Sundgren, J.-E., Hultman, L., Petrov, I. and Bergstrom, D. B., Appl. Phys. Lett., 67(20), p. 2928 (1995)Google Scholar
10. Oh, U. C., Je, J.H. and Lee, J.Y., J. Mater. Res., 10(3), p. 634 (1995)Google Scholar