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Microstructure and Mechanical Properties of Nitrided Molybdenum Silicide Coatings

Published online by Cambridge University Press:  25 February 2011

J-P. Hirvonen ,
I. Suni ,
H. Kattelus ,
R. Lappalainen ,
P. Torri ,
H. Kung ,
T.R. Jervis  and
M. Nastasi
J-P. Hirvonen
Affiliation:
Technical Research Centre of Finland, FIN- 02151 Espoo, Finland
I. Suni
Affiliation:
Technical Research Centre of Finland, FIN- 02151 Espoo, Finland
H. Kattelus
Affiliation:
Technical Research Centre of Finland, FIN- 02151 Espoo, Finland
R. Lappalainen
Affiliation:
FIN-00014 University of Helsinki, Finland
P. Torri
Affiliation:
FIN-00014 University of Helsinki, Finland
H. Kung
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545, USA
T.R. Jervis
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545, USA
M. Nastasi
Affiliation:
Los Alamos National Laboratory, Los Alamos, NM 87545, USA
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Abstract

Mo-Si-N films with a high nitrogen concentration were produced by sputter-deposition in the presence of nitrogen plasma. The chemical composition was determined with Rutherford backscattering and nuclear reaction analysis. The ratio of Mo to Si was 1:2 in the coatings with a nitrogen concentration of 50 %. The microstructure of the as-deposited coatings on a silicon substrate was amorphous and no crystallization was found after annealing up to 1000 °C, although some relaxation was observed in X-ray diffraction. This was confirmed in highresolution transmission electron microscope examination. The hardness of the Mo-Si-N films was 18.8 GPa as determined with a nanoindenter. This is significantly higher than that of MoSi2 films, 11.2 GPa. The hardness of the Mo-Si-N films increased to 24.4 GPa after annealing at 800 °C, which is approximately the same as the hardness of the high-temperature tetragonal phase of MoSi2, 25.5 GPa. Similarly, the modulus of the as-deposited Mo-Si-N film was higher (257 GPa) than that of the MOSi2 film (222 GPa). However, only a slight increase in the modulus of the Mo-Si-N film was found after annealing at 800 °C, whereas the modulus of the crystallized tetragonal MoSi2 was 382 GPa. No cracking was found in the Mo-Si-N films even after annealing at 1000 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 322: Symposium F – High-Temperature Silicides and Refractory Alloys , 1993 , 279
Copyright
Copyright © Materials Research Society 1994

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References

[1] Schlichting, J., High Temperatures - High Pressures 10 241 (1978).Google Scholar
[2] Meschter, P.J., Scripta Met. 25 1065 (1991).CrossRefGoogle Scholar
[3] Henager, C.H., Brinhall, J.L., and Hirth, J.P., Scripta Met. 26 585 (1992).CrossRefGoogle Scholar
[4] Castro, R.G., Smith, R.W., Rollett, A.D., and Stanek, P.W., Scripta Met. 26 207 (1992).CrossRefGoogle Scholar
[5] Hirvonen, J-P., Kattelus, H., Suni, I., Likonen, J., Jervis, T.R., and Nastasi, M., in Mechanical Properties and Deformation Behavior of Materials Having Ultra-Fine Microstructure, eds. Nastasi, M. et al. (Kluwer Academic Publishers, the Netherlands, 1993) p. 469.Google Scholar
[6] Goldschmidt, H.J., InterstitialAlloys (Butterworth and Co., Great Britain, 1967) p 560.Google Scholar
[7] Hirvonen, J-P., Lappalainen, R., Kattelus, H., Likonen, J., Suni, I., Kung, H., Jervis, T.R., and Nastasi, M., Mat. Res. Soc. Symp. Soc. 286 373 (1993).CrossRefGoogle Scholar
[8] Lappalainen, R., Phys. Rev. B34 3076 (1986).CrossRefGoogle Scholar
[9] Phase Diagrams of Ternary Boron Nitride and Silicon Nitride Systems, eds. Rogl, P. and Schuster, J.C. (ASM International, Materials Park, OH, 1992) p. 169.Google Scholar
[10] CRC Handbook of Chemistry and Physics, 63rd edition (CRC Press, Boca Raton, FL, 1984).Google Scholar
[11] Nicolet, M-A. and Lau, S.S., in VLSI Electronics: Microstructures Science ed. by Einspruch, N. G., Vol. 6 (Academic Press, Orlando FL, 1983) p. 330.Google Scholar