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Microstructure and Densification of Sintered (B+C)-Doped β-Silicon Carbide

Published online by Cambridge University Press:  22 February 2011

Wolfgang Braue ,
Hans-J. Kleebe  and
Carsten Wehling
Wolfgang Braue
Affiliation:
German Aerospace Research Establishment (DLR), Material Research Institute, Cologne, Germany
Hans-J. Kleebe
Affiliation:
University of Bayreuth, Materials Research Institute (IMA), Bayreuth, Germany
Carsten Wehling
Affiliation:
Technical University Berlin, Institute for Nonmetallic Materials, Berlin, Germany
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Abstract

The role of boron and carbon during densification of sintered β-SiC was investigated through the combined approach of in-situ dilatometry and CTEM/AEM inspection of TEM-foils referring to well-defined densification events. Preliminary data obtained indicate that in the early stages of densification, boron is not enriched in the continuous carbon-rich surface layer covering the β-SiC powder particles nor does it segregate to internal interfaces in high quantities. Small boron quantities are dissolved in the SiC grains- Simultaneously with the β- to α- phase transformation, decomposition of foam-like B4C aggregates releases small B4C particles, which are bound intragranularly to α-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 327: Symposium N – Covalent Ceramics II: Non-Oxides , 1993 , 269
Copyright
Copyright © Materials Research Society 1994

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References

1. Prochazka, S., in Ceramics for High Performance Applications, edited by Burke, J.J., Gorum, A.E. and Katz, R.N. (Brook Hill Publishing Co., Chestnut Hill, 1974) pp. 239.Google Scholar
2. Greskovich, C. and Rosolowski, J.H., Amn, J.. Ceram. Soc. 59, 336 (1976).Google Scholar
3. Bocker, W. and Hausner, H., Powder Metallurgy International 10, 87 (1978).Google Scholar
4. Hojo, J., in Silicon Carbide Ceramics-I, Fundamental and Solid Reaction, edited by Somiya, S. and Inomata, Y., Elsevier Science Publishers. New York, 1991) pp. 149.Google Scholar
5. Wroblewska, G.H. and Hamminger, R., Ceramics International 17, 199 (1991).Google Scholar
6. Rühle, M. and Petzow, G., in Surfaces and Interfaces in Ceramics and Ceramic-Metal Systems, Mat. Sci. Res. 14, edited by Pask, J.A. and Evans, A.G. (Plenum Press, New York, 1981) pp. 167.Google Scholar
7. Ogbuji, L.U., in Surfaces and Interfaces in Ceramics and Ceramic-Metal Systems, Mat. Sci. Res. 14, edited by Pask, J.A. and Evans, A.G. (Plenum Press, New York, 1981) pp. 713.Google Scholar
8. Lowell, C.E., J. Am. Ceram. Soc., 50, 142 (1967).Google Scholar
9. Tajima, Y. and Kingery, W.D., J. Am. Ceram. Soc., 65, C–27 (1982).Google Scholar
10. Rijswijk, W. van and Shanefield, D.J., J. Am. Ceram. Soc., 73, 148 (1990).Google Scholar
11. More, K.L., Carter, C.H., Bentley, J., Wadlin, W.H., LaVanier, L., and Davis, R.F., J. Am. Ceram. Soc., 69, 695 (1986).Google Scholar
12. Carter, W.D., Holloway, P.H., White, C., and Clausing, R., Advanced Ceramic Materials 3, 62 (1988).Google Scholar
13. Shaffer, P.T.B., Mat. Res. Bull., 5, 519 (1970).Google Scholar
14. Maddrell, E.R., J. Mater. Sci. Letters 6, 486 (1987).Google Scholar