Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T18:00:43.711Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure and Dangling Bond Defects in Amorphous Hydrogenated Silicon Deposited Near Room Temperature

Published online by Cambridge University Press:  21 February 2011

Man Ken Cheung  and
Mark A. Petrich
Man Ken Cheung
Affiliation:
Department of Chemical Engineering, Northwestern University, Evanston, IL 60208, USA
Mark A. Petrich
Affiliation:
Department of Chemical Engineering, Northwestern University, Evanston, IL 60208, USA
Get access

Abstract

The microstructure of high-density amorphous hydrogenated silicon (a-S.i:H) films deposited at 50°C substrate temperature was revealed by infrared (IR) and nuclear magnetic resonance (NMR) spectroscopies to be similar to that of “device-quality” a-Si:H films deposited at standard “optimum” conditions. However, optical absorption measurements of these low microstructure 50°C films with photothermal deflection spectroscopy indicate that they have higher densities of gap state defects and localized band tail states than “device-quality” films deposited at standard substrate temperatures. The correlation between the amount of microstructure and electronic properties is not unique. A low amount of microstructure is a necessary, but not sufficient, requirement for high electronic quality a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 191
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Cheung, M.K. and Petrich, M.A., in Amorphous Silicon Technology - 1991, edited by Madan, A., Hamakawa, Y., Thompson, M.J., Taylor, P.C., and LeComber, P.G. (Mater. Res. Soc. Proc. 219, Anaheim, CA, 1991) pp. 721–726.Google Scholar
2. Bhattacharya, E. and Mahan, A.H., Appl. Phys. Lett. 52, 1587 (1988).CrossRefGoogle Scholar
3. Roca i Cabarrocas, P., in Amorphous Silicon Technology - 1989, edited by Madan, A., Thompson, M.J., Taylor, P.C., Hamakawa, Y., and LeComber, P.G. (Mater. Res. Soc. Proc. 149, Pittsburgh, PA, 1989) pp. 33–38.Google Scholar
4. Roca i Cabarrocas, P. et. al., J. Appl. Phys. 62, 2942 (1991).Google Scholar
5. Chapman, B., Glow Dicharge Processes (John-Wiley & Sons, New York, 1980), pp. 156–161.Google Scholar
6. Perrin, J., Roca i Cabarrocas, P., Allain, B., and Friedt, J-M., Jpn. J. Appl. Phys. 27, 2041 (1988).CrossRefGoogle Scholar
7. Longeway, P.A., in Semiconductors and Semimetals, Vol. 21A, edited by Pankove, J.I. (Academic Press, Orlando, FL, 1984), pp. 179–193.Google Scholar
8. Doughty, D.A., Doyle, J.R., Lin, G.H., and Gallagher, A., J. Appl. Phys. 62, 6220 (1990).CrossRefGoogle Scholar
9. Kushner, M.J., J. Appl. Phys. 63, 2532 (1988).CrossRefGoogle Scholar
10. Schropp, R.E.I. et al., in Amorphous Silicon Technology - 1991, edited by Madan, A., Hamakawa, Y., Thompson, M.J., Taylor, P.C., and LeComber, P.G. (Mater. Res. Soc. Proc. 219, Anaheim, CA, 1991) pp. 519–524.Google Scholar
11. Drevillon, B. and Toulemonde, M., J. Appl. Phys. 58, 535 (1985).CrossRefGoogle Scholar
12. Kakalios, J., in Semiconductors and Semimetals. Vol. 34, edited by Pankove, J.I. and Johnson, N.M. (Academic Press, San Diego, CA, 1991), pp. 381–445.Google Scholar
13. Gleason, K.K., Petrich, M.A., and Reimer, J.A., Phys. Rev. B 36, 3259 (1987).Google Scholar