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Microstructural Study of GaN Grown on Sapphire by MOCVD

Published online by Cambridge University Press:  21 February 2011

Saket Chadda ,
Mike Pelcynski ,
Kevin Malloy  and
Steve Hersee
Saket Chadda
Affiliation:
Center for High Technology Materials (CHTM), University of New Mexico, Albuquerque, New Mexico 87131
Mike Pelcynski
Affiliation:
Center for High Technology Materials (CHTM), University of New Mexico, Albuquerque, New Mexico 87131
Kevin Malloy
Affiliation:
Center for High Technology Materials (CHTM), University of New Mexico, Albuquerque, New Mexico 87131
Steve Hersee
Affiliation:
Center for High Technology Materials (CHTM), University of New Mexico, Albuquerque, New Mexico 87131
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Abstract

Cross-sectional Transmission Electron Microscopy (TEM) was used to probe dislocation density and crystallographic orientation relationships in epitaxial GaN layers grown on (0001) sapphire substrates. These Metallo-Organic Chemical Vapor Deposited (MOCVD) structures contained a 200 Å A1N buffer layer. Previous studies1 have incorporated 500 Å (or thicker) A1N buffer layers. It was found that thinner A1N buffer layers may be used without deterioration of GaN crystal quality. Threading dislocation density of ~108 #/cm2 was estimated from bright field micrographs. The relative crystallographic orientations of the substrate and epi-layers was determined by comparing real and simulated electron diffraction patterns. This revealed a 30° ‘twist’ between the basal plane of the sapphire substrate and the AlN/GaN epilayers. XTEM including High Resolution TEM (HRTEM) and HRTEM image simulations are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 353
Copyright
Copyright © Materials Research Society 1994

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References

1 Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T., and Oki, K., J. Cryst. Growth 115, 628 (1991).Google Scholar
2 Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
3 Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K., and Sawaki, N., J. Cryst. Growth 98, 209 (1989).Google Scholar
4 Koide, Y., Itoh, N., Itoh, K., Sawaki, N., and Akasaki, I., Jpn. J. Appl. Phys., 27(7) 1156 (1988).Google Scholar
5 Amano, H., Akasaki, I., Hiramatsu, K., Koide, N., and Sawaki, N., presented at 7 th international conference on Thin films, India. (1987).Google Scholar
6 Yoshida, S., Misawa, S., and Gonda, S., Appl. Phys. Lett. 52(5) (1983) 427.Google Scholar
7 Powell, R. C., Lee, N. E., Kim, Y. W., and Greene, J. E., J. Appl. Phys. 73(1) 189 (1993).Google Scholar