Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T07:46:29.095Z Has data issue: false hasContentIssue false

Microstructural Characterization of Platinum Films Grown by Mocvd

Published online by Cambridge University Press:  15 February 2011

M. Vellaikal
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695 - 7907.
S. K. Streiffer
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695 - 7907.
R. R. Woolcott Jr.
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695 - 7907.
A. I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695 - 7907.
Get access

Abstract

Platinum thin films were deposited on SiO2/Si(100) by metalorganic chemical vapor deposition using Pt(acetylacetonate) and Pt(hexaflouroacetylacetonate) as precursors. The films were characterized in terms of orientation, surface roughness and morphology. As expected, Pt(111) was the preferred orientation. Higher substrate temperatures led to higher growth rates and increased surface roughness. The presence of oxygen during deposition decreased the minimum substrate temperature required for platinum deposition, indicating that oxygen played a role in the decomposition of these metalorganic compounds. Annealing platinum films at 550°C in an oxygen ambient resulted in hillock formation. Resistivity measurements showed that films deposited without oxygen were more resistive. Conformal coverage of platinum on patterned SiO2/Si substrates was investigated, and a side wall film thickness to top film thickness ratio of 0.6 for growth at 400°C was obtained. These Pt films produced by MOCVD displayed greater surface roughnesses than films grown by evaporation or sputtering.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Chen, I. X., Kingon, A. I., AI-Shareef, H. and Bellur, K. R., Ferroelectrics 151, 133, (1994).Google Scholar
2. Hren, Philip D., Rou, S. H., Al-Shareef, H. N., Ameen, M. S., Auciello, O. and Kingon, A. I., Integrated Ferroelectrics, 2, 311, (1992).Google Scholar
3. Summerfelt, Scott R., Kotecki, Dave, Kingon, Angus and Shareef, H., Ferroelectric Thin Films IV, Mat. Res. Symp. Proc. 361, 257, (1994).Google Scholar
4. Rand, M.J., J. Electrochem. Soc. 120, 686, (1973).Google Scholar
5. Kwak, B. S., First, P. N., Erbil, A., Wilkens, B.J., Budai, J. D., Chisholm, M. F. and Boatner, L. A., J. Appl. Phys. 72 (8), 3735, (1992).Google Scholar
6. Koplitz, L. V., Shuh, D. K., Chen, Y. J., Williams, R. S. and Zink, J. I., Appl. Phys. Lett. 53 (18),1705, (1988).Google Scholar
7. Chen, Y. J., Kaesz, H. D., Thridandam, H. and Hicks, R. F., Appl. Phys. Lett. 53 (17),1591, (1992).Google Scholar
8. Xue, Z., Thridandam, H., Kaesz, H. D., Hicks, R. F., Chem. Mater. 4, 162, (1992).Google Scholar
9. Feurer, E., Krauss, S. and Suhr, H., J. Vac. Sci. Technol. A 7(4), 2779, (1989).Google Scholar
10. Kumar, R., Roy, S., Rashidi, M. and Puddephatt, R. J., Polyhedron, Vol .8, 4, 551, (1989).Google Scholar
11. Handbook, Gmelin, Pt Suppl. Vol. A 1, 46.Google Scholar
12. Braichotte, D., Garrido, C. and van der Bergh, H., Appl. Surf. Sci., 46, 9 (1991).Google Scholar
13. Olofawalfe, J. O., Jones, R. E. Jr., Campbell, A., Hegde, R. I., Mogab, C. J. and Gregory, R. B., J. Appl. Phys., 73, 1764, (1993).Google Scholar
14. Sreenivas, K., Raney, I., Maeder, T., Setter, N., Jagdish, C. and Elliman, R. G., J. Appl. Phys, 75, 232, (1994).Google Scholar