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Microstructural Characterization of Photoluminescent Porous Silicon

Published online by Cambridge University Press:  15 February 2011

J. M. Macaulay ,
F. M. Ross ,
P. C. Searson ,
S. K. Sputz ,
R. People  and
L. E. Friedersdorf
J. M. Macaulay
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974 Physics Dept., SUNY at Stony Brook, Stony Brook, NY 11794
F. M. Ross
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
P. C. Searson
Affiliation:
Dept. of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218
S. K. Sputz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. People
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. E. Friedersdorf
Affiliation:
Dept. of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218
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Abstract

We have used electron microscopy to examine the microstructure of porous silicon films over a wide range of doping levels, and photoluminescence spectroscopy to study their optical properties. We discuss the impact of our experimental results on models from the literature which were proposed to explain visible luminescence from porous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 47
Copyright
Copyright © Materials Research Society 1992

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References

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