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Microstructural Characterization of High-Pressure Oxidized Si1-x Gex /Si Heterolayers

Published online by Cambridge University Press:  25 February 2011

N. David Theodore  and
Gordon Tam
N. David Theodore
Affiliation:
Motorola Inc., Core Technologies, 2200 West Broadway Rd., Mesa, AZ 85202.
Gordon Tam
Affiliation:
Motorola Inc., Advanced Custom Technologies, 2200 West Broadway Rd., Mesa, AZ 85202.
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Abstract

SiGe alloys have recently been of interest for fabrication of heterojunction bipolar transistors using pre-existing or modified silicon-processing technology. These devices are faster than devices using pure silicon. Because of the interest in developing SiGe device structures, various elements of processing relevant to fabrication of the devices are being investigated. One such element has been the use of thermal oxidation for isolation of SiGe devices. Utilization of the technique requires an understanding of oxidation behavior of SiGe layers under a variety of oxidation conditions. Past studies in the literature have investigated the oxidation of SiGe at atmospheric pressure or at very high pressures (∼650–1300 atmospheres). The present study investigates the wet-oxidation of SiGe structures at intermediate pressures (∼25 atmospheres) and temperatures (∼750°C). Unlike atmospheric oxidation, most of the Ge (from SiGe) remains in the oxidized silicon (SiO2) in the form of GeO2. Occasional segregation of Ge to the oxidizing interface is noted. The microstructural behavior of partially and entirely oxidized structures is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 545
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Park, J.S., Karunasiri, R.P.G., Wang, K.L., Rhee, S.S., and Chern, C.H., Appl. Phys. Lett. 54, 1564 (1989).CrossRefGoogle Scholar
2. Iyer, S.S., Patton, G.L., Stork, J.M.C., Meyerson, B.S., and Harame, D.L., IEEE Trans. Electron Devices 36, 2043 (1989).CrossRefGoogle Scholar
3. Esaki, L., and Chang, L.L., Phys. Rev. Lett. 33, 495 (1984).CrossRefGoogle Scholar
4. Margalit, S., Bar-Lev, A., Kuper, A.B., Aharoni, H., and Neugroschel, A., J. Cryst. Growth 17, 288 (1972).CrossRefGoogle Scholar
5. Patton, G.L., Iyer, S.S., Dclae, S.L., Ganin, E., and Mcintosh, R.C., Mater. Res. Soc. Symp. Proc. 102, 295 (1988).CrossRefGoogle Scholar
6. LeGoues, F.K., Rosenberg, R., and Meyerson, B.S., Appl. Phys. Lett. 54, 644 (1989).CrossRefGoogle Scholar
7. LeGoues, F.K., Rosenberg, R., Nguyen, T., Himpsel, F., and Meyerson, B.S., J. Appl. Phys. 65, 1724 (1989).CrossRefGoogle Scholar
8. Nayak, D., Kamjoo, K., Woo, J.C.S., Park, J.S., and Wang, K.L., Appl. Phys. Lett. 56, 66 (1990).CrossRefGoogle Scholar
9. Nayak, D., Kamjoo, K., Park, J.S., Woo, J.C.S., and Wang, K.L., Appl. Phys. Lett. 57, 369 (1990).CrossRefGoogle Scholar
10. Liou, H.K., Mci, P., Gcnnser, U., and Yang, E.S., Appl. Phys. Lett. 59, 1200 (1991).CrossRefGoogle Scholar
11. Caragianis, C., Paine, D.C., Roberts, C., and Crisman, E., in Chemical Perspectives in Microelectronic Materials II, (MRS, Pittsburgh, 1991), p. 108.Google Scholar
12. Paine, D.C., Caragianis, C., and Schwartzman, A.F. J. Appl. Phys. 70, 5076 (1991).CrossRefGoogle Scholar
13. Barin, I., and Knackc, O., Thermochemical Properties of Inorganic Substances, (Springer, Berlin, 1977), quoted in Ref. 12.CrossRefGoogle Scholar