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Microstructural Characterization of Epitaxial Bottom Electrodes, Buffered Layers, and Ferroelectric thin Films

Published online by Cambridge University Press:  25 February 2011

Shang Hsien Rou
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC., Also, MCNC, RTP, NC
T. M. Graettinger
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC., Also, MCNC, RTP, NC
A. F. Chow
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC., Also, MCNC, RTP, NC
C. N. Soble
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC., Also, MCNC, RTP, NC
D. J. Lichtenwalner
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC., Also, MCNC, RTP, NC
O. Auciello
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC., Also, MCNC, RTP, NC
A. I. Kingon
Affiliation:
Department of Materials Science and Engineering, NCSU, Raleigh, NC., Also, MCNC, RTP, NC
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Abstract

Three subjects are covered in this paper. First, a set of criteria are established to explain how epitaxial growth can be achieved for sol-gel processed ferroelectric thin films. These criteria describe the conversion of amorphous films to epitaxial films. Second, we report the microstructures of ion beam sputtered buffer layers, (100) MgO on (100) Si, and epitaxial bottom electrodes, (100) Pt on (100) MgO and (111) Pt on (0001) A12O3, for the integration of ferroelectric films with various types of substrates. Third, microstructures of the multilayered epitaxial films, (001) YBa2Cu307-δ on (100) KNbO3/(100) MgO and (100) KNbO3 on (100) MgO/(100) Si, are characterized. The results indicate that high quality epitaxial multilayered films can be obtained under the proper processing conditions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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