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Microscopic Identification of Optical Defects in Silicon by Photoluminescence

Published online by Cambridge University Press:  28 February 2011

R. Sauer
R. Sauer*
Affiliation:
Physikalisches Institut (4), Universität Stuttgart D-7000 Stuttgart 80, Pfaffenwaldring 57, F.R., Germany
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Abstract

The paper reviews isotope effects observed in the photoluminescence (or absorption) of deep defects in silicon introduced by irradiation damage, heating, quenching or during crystal growth. Three examples are discussed in more detail where photoluminescence methods, partially in combination with other analytical methods, have led to microscopic defect models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 507
Copyright
Copyright © Materials Research Society 1985

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References

[1] Canham, L., Davies, G. and Lightowlers, E.C., J. Phys. C 13, L 757 (1980).Google Scholar
[2] For quotations of earlier work, see Refs 5 and 7..Google Scholar
[3] Brower, K.L., Phys. Rev. B 9, 2607 (1974).Google Scholar
[4] Davies, G. and doCarmo, M.C., J.Phys. C 14, L 687 (1981). (1981).Google Scholar
[5] Thonke, K., Klemisch, H., Weber, J. and Sauer, R., Phys. Rev. B 24, 5874 Google Scholar
[6] Lee, K.M., O'Donnell, K.P., Weber, J., Cavenett, B.C. and Watkins, G.D., Phys. Rev. Lett. 48, 37 (1982).Google Scholar
[7] O'Donnell, K.P., Lee, K.M. and Watkins, G.D., Physica 116 B, 258 (1983).Google Scholar
[8] Davies, G., Lightowlers, E.C. and doCarmo, M., J. Phys. C 16, 5503 (1983).Google Scholar
[9] Thonke, K., Weber, J., Wagner, J. and Sauer, R., Physics 116 B, 252 (1983).Google Scholar
[10] Thonke, K., BUrger, N., Watkins, G.D. and Sauer, R., Proc. 13th Internat. Conf. Defects Semicond. (Coronado 1984), edited by Kimmerling, L.C. and Parsey, J.M. (The Metallurgical Society of AIME, 1985), Vol. 14a, p. 823.Google Scholar
[11] Leigh, R.S. and Sangster, M.J.L., Phys. Rev. B 27, 6331 (1983).Google Scholar
[12] Canham, L., Davies, G. and Lightowlers, E.C., Inst. Phys. Conf. Ser. No 59, 211 (1981) - Proc. llth ICDRES, Oiso (Japan), 1980.Google Scholar
[13] Canham, L., Davies, G., Lightowlers, E.C. and Blackmore, G.W., Physica 117 B/118 B, 119 (1983).Google Scholar
[14] Davies, D., Canham, L. and Lightowlers, E.C., J.Phys. C 17, L 173 (1984).Google Scholar
[15] Lightowlers, E.C., Canham, L.T., Davies, G., Thewalt, M.L.W. and Watkins, S.P., Phys. Rev. B 29, 4517 (1984)Google Scholar
[16] Weber, J., Schmid, W. and Sauer, R., Phys. Rev. B 21, 2401 (1980).CrossRefGoogle Scholar
[17] Thewalt, M.L.W., Watkins, S.P., Ziemelis, U.O., Lightowlers, E.C. and Henry, M.O., Solid State Commun. 44, 573 (1982) and further references therein.Google Scholar
[18] Tajima, M., Jpn. J. Appl. Phys. 21, Suppl., 113 (1982).Google Scholar
[19] Sauer, R., Weber, J. and Zulehener, W., Appl. Phys. Lett. 44, 440 (1984).Google Scholar
[20] Alt, H. Ch. and Tapfer, L., Proc. 13th ICDS (see Ref. 10), p. 833.Google Scholar
[21] Dörnen, A. and Sauer, R. (unpublished) and E.C. Lightowlers (private communication, unpublished).Google Scholar
[22] Ddrnen, A., Sauer, R. and Pensl, G., to be published.Google Scholar
[23] Murakami, K., Itoh, H., Takita, K., Masuda, K. and Nishino, T., Proc. 17th Internat. Conf. Phys. Semicond., San Francisco 1984.Google Scholar
[24] Canham, L.T., Davies, G. and Lightowlers, E.C., Proc. 13th ICDS (see Ref. 10), p. 847.Google Scholar
[25] Thonke, K., BUrger, N. and Sauer, R., Phys. Rev. B (submitted).Google Scholar
[26] Irion, E., BUrger, N., Thonke, K. and Sauer, R., J. Phys. C (in press).Google Scholar
[27] Wagner, J., Dbrnen, A. and Sauer, R., Phys. Rev. B (April 1985).Google Scholar
[28] Davies, G., Lightowlers, E.C., Woolley, R., Newman, R.C. and Oates, A.S., J. Phys. C 17, L 499 (1984).Google Scholar
[29] Thonke, K., Watkins, G.D. and Sauer, R., Solid State Commun. 51, 127 (1984).CrossRefGoogle Scholar
[30] Foy, C.P., J. Phys. C 15, 2059 (1982).Google Scholar
[31] DBrnen, A., Weber, J. and Sauer, R., Proc. 13th ICDS (see Ref. 10), p. 653.Google Scholar
[32] Wagner, J., Thonke, K. and Sauer, R., Phys. Rev. B 29, 7051 (1984).Google Scholar
[33] Wagner, J., Dbrnen, A. and Sauer, R., see this Conference Proceedings.Google Scholar
[34] Sauer, R. and Wagner, J., to be published.Google Scholar
[35] Canham, L.T., Davies, G. and Lightowlers, E.C., Proc. 17th ICPS (see Ref. 23).Google Scholar
[36] Weber, J., Bauch, H. and Sauer, R., Phys. Rev. B 25, 7688 (1982).Google Scholar
[37] Watkins, S.P., Ziemelis, U.O. and Thewalt, M.L.W., Solid State Commun. 43, 687 (1982).Google Scholar
[38] Sauer, R. and Weber, J., Physica 116 B, 195 (1983).Google Scholar
[39] Conzelmann, H., Proc. 13th ICDS (see Ref. 10), p. 869.Google Scholar
[40] Gislason, H.P., Monemar, B., Pistol, M.E., Dean, P.J., Herbert, D.C., Kana'ah, A. and Cavenett, B.C., Phys. Rev. B 31, 3774 (1985).Google Scholar
[41] Thonke, K., 1983 (unpublished).Google Scholar
[42] Minaev, N.S. and Mudryi, A.V., phys. stat. sol. (a) 68, 501 (1981).Google Scholar
[43] Clifton, P., Davies, G. and Lightowlers, E.C., J. Phys. C 17, L 889 (1984).Google Scholar