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Micro-Raman Study of Mechanical Stress in Polycrystalline Silicon Bridges

Published online by Cambridge University Press:  10 February 2011

H. Talaat ,
S. Negm ,
H. Schaffer ,
G. Kaltsas  and
A. G. Nassiopoulou
H. Talaat
Affiliation:
Faculty of Science, Ain Shams University, Cairo, Egypt.
S. Negm
Affiliation:
Faculty of Science, Ain Shams University, Cairo, Egypt.
H. Schaffer
Affiliation:
Instruments SA, Edison, NJ, USA 08820.
G. Kaltsas
Affiliation:
Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, GR- 15310 Aghia Paraskevi Attikis, Athens, Greece.
A. G. Nassiopoulou
Affiliation:
Institute of Microelectronics, NCSR Demokritos, P.O. Box 60228, GR- 15310 Aghia Paraskevi Attikis, Athens, Greece.
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Abstract

Micro-Raman spectroscopy is used to study mechanical stress distribution in polycrystalline silicon bridges on cavities micromachined in crystalline Si wafers. The influence of the processing parameters such as the thickness of polycrystalline membrane, the annealing conditions (before or after removal of the sacrificial porous-Si layer ), are studied. The results indicate that the annealing reduces the residual stress by an order of magnitude and that the membrane thickness of 2.5 μm has the least residual stress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 495
Copyright
Copyright © Materials Research Society 1998

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References

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