Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T17:31:17.005Z Has data issue: false hasContentIssue false
  • English
  • Français

Micro-Raman Characterization of Unusual Defect Structure in Arsenic-Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

David D. Tuschel  and
James P. Lavine
David D. Tuschel
Affiliation:
Imaging Research and Advanced Development, Eastman Kodak Company, Rochester, NY 14650–2132, [email protected]
James P. Lavine
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650–2008
Get access

Abstract

Raman spectroscopy has often been used to study the damage to semiconductors induced by ion implantation. Off-axis, macro-Raman spectra reveal extensive damage to the silicon lattice, consistent with many literature reports. However, when the same samples were analyzed in the backscattering mode by micro-Raman spectroscopy, evidence was found for orientational dependent lattice damage and an unusual defect structure. P/O micro-Raman spectra reveal the spatially-varying appearance of a band between 505 and 510 cm−1 always accompanied by that of the silicon optical mode at 520 cm−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 227
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kirillov, D., Powell, R.A., and Hodul, D.T., J. Appl. Phys. 58, 2174(1985).Google Scholar
2. deWilton, A.C., Simard-Normandin, M., and Wong, P.T.T., J. Electrochem. Soc. 133, 988(1986).Google Scholar
3. Braunstein, G., Tuschel, D., Chen, Samuel, and Tong, S. LeeJ. Appl. Phys. 66, 3515(1989).Google Scholar
4. Desnica, U.V., Desnica-Frankovic, I.D., Ivanda, M., Furic, K., and Haynes, T.E., Phys. Rev. B 55, 16205(1997).Google Scholar
5. Lavine, J.P. and Tuschel, D.D., Bull. Am. Phys. Soc. 44, 1338, paper SC08–8 (1999).Google Scholar
6. Tuschel, D.D., Lavine, J.P., Russell, J.B., in Diagnostic Techniques for Semiconductor Materials Processing II, edited by Pang, S.W., Glembocki, O.J., Pollak, F.H., Celii, F.G., and Sotomayor, C.M. Torres (Mater. Res. Soc. Symp. Proc. 406, Pittsburgh, PA, 1996) pp. 549–554.Google Scholar
7. Tuschel, D.D. in Microbeam Analysis, edited by Howitt, D.G. (San Francisco Press, San Francisco, 1991), p. 109.Google Scholar
8. Lavine, J.P. and Tuschel, D.D., this Proceedings.Google Scholar
9. Othonos, A., Christofides, C., Boussey-Said, J., and Bisson, M., J. Appl. Phys. 75, 8032(1994).Google Scholar
10. Zhang, P.X., Mitchell, I.V., Tong, B.Y., Schultz, P.J., and Lockwood, D.J., Phys. Rev. B 50, 17080(1994).Google Scholar
11. Zhang, P.X., Mitchell, I.V., Schultz, P.J., and Lockwood, D.J., J. Raman Spectrosc. 25, 515(1994).Google Scholar
12. Morehead, F.F., Jr. and Crowder, B.L., in Ion Implantation, edited by Eisen, F.H. and Chadderton, L.T. (Gordon and Breach, London, 1971), p. 25.Google Scholar
13. Mizoguchi, K., Harima, H., Nakashima, S., and Hara, T., J. Appl. Phys. 77, 3388(1995).Google Scholar