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Micromachined Active Piezoelectric Structures for Applications above 600 °C

Published online by Cambridge University Press:  31 January 2011

Jan Sauerwald
Affiliation:
[email protected], Clausthal University of Technology, Department of Natural and Materials Sciences, Goslar, Germany
Denny Richter
Affiliation:
[email protected], Clausthal University of Technology, Department of Natural and Materials Sciences, Goslar, Germany
Holger Fritze
Affiliation:
[email protected], Clausthal University of Technology, Department of Natural and Materials Sciences, Goslar, Germany
Erik Ansorge
Affiliation:
[email protected], Otto-von-Guericke University Magdeburg, Institute of Micro and Sensor Systems, Magdeburg, Germany
Bertram Schmidt
Affiliation:
[email protected], Otto-von-Guericke University Magdeburg, Institute of Micro and Sensor Systems, Magdeburg, Germany
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Abstract

Miniaturized monolithic langasite structures are micromachined using local doping of lan-gasite and wet chemical etching. The diffusion coefficients of niobium, strontium and praseodymium in langasite are determined in order to control the preparation process and to obtain information about the stability of locally doped structures at elevated temperatures. A wet etching process based on phosphoric acid for langasite is developed and used to manufacture microstructured elements like planar and biconvex membranes as well as field emitter diodes. These elements are characterized with respect to their application relevant properties such as resonator quality factor and field emission current at temperatures of 600 °C and above.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1 Richter, D. Schneider, T. Doerner, S. Fritze, H. and Hauptmann, P. Proceedings Solid-State Sensors, Actuators and Microsystems Conference TRANSDUCERS 2007, 991 (2007).Google Scholar
2 Danel, J. S. Michel, F. and Delapierre, G. Sensors & Actuators A21-A23, 971 (1990).Google Scholar
3 Leblois, T. Tellier, C. and Messaoudi, T. Sensors & Actuators: A. Physical 61, 405 (1997).Google Scholar
4 Sauerwald, J. Richter, D. Ansorge, E. Schmidt, B. and Fritze, H. Solid State Ionics 179, 928 (2008).Google Scholar
5 Ansorge, E. Schimpf, S. Hirsch, S. Sauerwald, J. Fritze, H. and Schmidt, B. Sensors & Actuators: A. Physical 130, 393 (2006).Google Scholar
6 Fowler, R. H. and Nordheim, L. Proceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 173 (1928).Google Scholar
7 Spindt, C. A. Brodie, I. Humphrey, L. and Westerberg, E. R. Journal of Applied Physics 47, 5248 (1976).Google Scholar
8 Buttry, D. A. and Ward, M. D. Chemical Reviews 92, 1355 (1992).Google Scholar
9 Richter, D. Sauerwald, J. Fritze, H. Ansorge, E. and Schmidt, B. 2008 IEEE Sensors, 1536 (2008).Google Scholar