Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T19:33:06.187Z Has data issue: false hasContentIssue false
  • English
  • Français

Microdiffraction Studies of Oxygen in Silicon - A New SiO2 Phase?

Published online by Cambridge University Press:  28 February 2011

J. C. H. Spence ,
N. Long ,
W. Bergholz ,
Y. Kim  and
M. O'Keeffe
J. C. H. Spence
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona 85287 USA
N. Long
Affiliation:
CSSS, Arizona State University, Tempe, Arizona 85287 USA
W. Bergholz
Affiliation:
Siemens Research, Otto Hahn Ring 6, 8000 Munchen 83, F.R.G.
Y. Kim
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona 85287 USA
M. O'Keeffe
Affiliation:
Department of Chemistry, Arizona State University, Tempe, AZ 85287 USA
Get access

Abstract

Evidence for a new microcrystalline precipitate in CZ Si annealed for 256 hrs at 635°C is presented by electron microdiffraction. This may be a precursor phase for the formation of amorphous platelets [9]. Multiple scattering microdiffraction calculations which distinguish the symmetries of two models for the thermal donor are also given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 237
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Bourret, A., in Proc. 13th Int. Conf. on Defects in Semiconductors, (1984) p. 129 (A.I.M.E., New York).Google Scholar
[2] Ourmazd, A., Schroter, W.and Bourret, A., J. Appl. Phys, 56, p. 1670 (1984).Google Scholar
[3] Henry, P.M., Farmer, J.W., Meese, J.M., Appl. Phys. Letts. In press. (1984).Google Scholar
[4] Cowley, J.M. and Spence, J.C.H., Ultramicroscopy, 3, p. 433 (1979).Google Scholar
[5] Alexander, H., Spence, J.C.H., Shindo, D., Gottschalk, H., Phil. Mag. in press. (1985).Google Scholar
[6] Spence, J.C.H. In: Proc. Ninth, Int. Congr. on Electron Micros. (Canadian Micros. Soc., Toronto) p. 554 (1978).Google Scholar
[7] Bourret, A. and Colliex, C.Trebbia, P. J. Physique 44, L33 (1983).Google Scholar
[8] X-ray Powder Diffraction file. Publication SMA-T6 of the Joint Committee on powder diffraction standards (1601 Park Lane, Swarthmore, Penn, 19081, USA) (1976).Google Scholar
[9] Fraundorf, P., Chiou, H.-D. and Fraundorf, G.K., J. Cryst. Growth (1985) submitted. Also proc. 3rd VLSI Symp. (1985) p. 436 (Electrochem. Soc.).Google Scholar
[10] Bourret, A., Thibault-Desseaux, J., and Seidman, D.N., J. Appl. Phys. 55, p. 825 (1984).Google Scholar
[11] Yamamoto, N., Spence, J.C.H. and Fathy, D., Phil. Mag. B 49, p. 609 (1984).Google Scholar
[12] O, Keefe, M. and Hyde, B.G., Acta Cryst. B32, p. 2923 (1976).Google Scholar