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Microcrystallinity in α-Si, Ge:H, F Alloys

Published online by Cambridge University Press:  28 February 2011

D. S. Shen ,
J. Kolodzey ,
D. Slobodin ,
J. P. Conde ,
C. Lane ,
I. H. Campbell ,
P. M. Fauchet  and
S. Wagner
D. S. Shen
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
D. Slobodin
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J. P. Conde
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
C. Lane
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
I. H. Campbell
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

Microcrystalline inclusions in hydrogenated and fluorinated amorphous silicongermanium alloys, α-Si, Ge:H, F, were studied. Microcrystals grown during RF or DC glow discharge deposition from SiF4, GeF4 and H2 consist of either pure Si or Ge. Microcrystals produced by thermal annealing of initially amorphous alloys are either microcrystalline Ge or microcrystalline Si-Ge alloys depending on the annealing temperature. Values for the grain size were calculated from X-ray diffraction (XRD) and Raman spectra. The grain size of the “grown” microcrystal ranges from 8 to 60 nm. These grown grains exhibit preferential orientation of the (220) planes parallel to the substrate surface. Microcrystals produced by high-temperature anneal are randomly oriented. Scanning electron micrographs of as-grown samples show protruding platelets several 100 nm long and several 10 nm wide. Fractured cross sections exhibit columnar structure.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 301
Copyright
Copyright © Materials Research Society 1986

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References

[1] Wagner, S., Acta. Metallurgica, to be publishedGoogle Scholar
[2] Kolodzey, J., Aljishi, S., Schwarz, R. and Wagner, S., submitted to J. Vac. Sci. Tech.Google Scholar
[3] Veprek, S., Iqbal, Z., Oswald, H. and Webb, A.P., J. Phys. C 14, 295, (1981).CrossRefGoogle Scholar
[4] Collins, R.W., Appl. Phys. Lett. 48, 843, (1986).CrossRefGoogle Scholar
[5] Fritzsche, H., Thin Solid Films 90, 119, (1982).CrossRefGoogle Scholar
[6] Aljishi, S., Slobodin, D., Kolodzey, J., Chu, V. and Wagner, S., this symposium.Google Scholar
[7] Slobodin, D., Aljishi, S., Schwarz, R. and Wagner, S., Mat. Res. Soc. Symp. Proc. Vol. 49, p. 153 (1985).CrossRefGoogle Scholar
[8] Cullity, B.D., Elements of X-Ray Diffraction, (Addison-Wesley Reading, Mass., 1967), p. 261.Google Scholar
[9] Campbell, I.H. and Fauchet, P.M., Solid State Comm., to be published.Google Scholar
[10] Kohno, K., Technical Digest of First International Photovoltaic Science and Engineering Conference, Kobe, 1984, p. 735.Google Scholar
[11] Chao, S.S., Gonzalez-Hernandez, J., Martin, D. and Tsu, R., Appl. Phys. Lett. 46, 1089, (1985).CrossRefGoogle Scholar
[12] Moustakas, T.D., in Tetrahedrally Bonded Amorphous Semiconductors, edited by Adler, D. and Fritzsche, H. (Plenum Press, New York, 1985). p. 93 Google Scholar
[13] Thornton, J.A., J. Vac. Sci. Tech. 11, 666, (1974)CrossRefGoogle Scholar