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Microcrystalline Silicon Growth: Deposition Rate Limiting Factors

Published online by Cambridge University Press:  10 February 2011

S. Hamma ,
D. Colliquet  and
P. Rocai Cabarrocas
S. Hamma
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 CNRS), Ecole Polytechnique, 91128 Palaiseau, Cedex, France
D. Colliquet
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 CNRS), Ecole Polytechnique, 91128 Palaiseau, Cedex, France
P. Rocai Cabarrocas
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 CNRS), Ecole Polytechnique, 91128 Palaiseau, Cedex, France
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Abstract

Microcrystalline silicon films were deposited on corning glass substrates both by the standard hydrogen dilution and the layer-by-layer (LBL) technique. In-situ UV-visible spectroscopic ellipsometry measurements were performed to analyze the evolution of the composition of the films.The change of the hydrogen plasma conditions by increasing the pressure in the LBL process leads to a faster kinetic of crystallization and to an increase of the deposition rate by a factor of two. The increase of the pressure and the decrease of the inter-electrode distance allowed to increase the deposition rate from 0.26 to 3 Å/s in the hydrogen dilution technique. Interestingly enough, the crystalline fraction of the films remains higher than 50%. However, as the deposition rate increases the growth process results in a slower kinetic of crystallization with a long range evolution of the film composition (up to 0.5 νm).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 505
Copyright
Copyright © Materials Research Society 1998

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References

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