Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-28T10:42:53.508Z Has data issue: false hasContentIssue false

MeV Self Ion Beam Induced Amorphisation of Silicon Carbide Surfaces and Its Effect on Their Trdbomechanical Propertdzs

Published online by Cambridge University Press:  28 February 2011

D. K. Sood
Affiliation:
Microelectronics & Materials Technology Centre, Royal Melbourne Institute of Technology, 124 La Trobe Street, Melbourne, 3000, Australia
V. C. Nath
Affiliation:
Microelectronics & Materials Technology Centre, Royal Melbourne Institute of Technology, 124 La Trobe Street, Melbourne, 3000, Australia
Yang Xi
Affiliation:
Microelectronics & Materials Technology Centre, Royal Melbourne Institute of Technology, 124 La Trobe Street, Melbourne, 3000, Australia
Get access

Abstract

Amorphisation of sintered SiC by bombardment with self (C, Si) ions has been studied. Ion doses ranged from 1×1015 to 1×1017 ions/cm2; and ion energy was varied from 0.09 to 5 MeV. Amorphisation was detected by micro-focus Raman scattering. Tribomechanical properties-friction and wear were studied with a high precision pin (steel ball) and disc (implanted) machine. Results show substantial improvements in friction and wear, which persist to a large number of cycles. Tribomechanical properties are shown to correlate with surface amorphisation and carburisation. Carbon ions are found to be much more effective than Si ions (with similar damage distributions) in reducing friction and wear.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wei, W., Lankford, J., Singer, I. and Kossowsky, R., Surf. Coat. Technol. 37, 179 (1989); and references therein.Google Scholar
2. Wood, S., Greggi, J. Jr, Spitznagel, J.A., Doyke, N.J., Irwin, R.B., Townsend, J.R. and Choyke, W.J., Inst. Phys. Conf. Ser. No. 67. 247 (1983).Google Scholar
3. Bhattacharya, R.S., Rai, A.K. and Pronko, P.P., J. Appl. Phys. 61, 4791 (1987).Google Scholar
4. Itoh, A., Hioki, T. and Kawamoto, J., Nucl. Instrum. Meth. Phys. Res. B37/38, 692 (1989).Google Scholar
5. Spitznagel, J.A., Wood, S., Choyke, W.J., Doyle, N.J., Bradshaw, J. and Fishman, S.G., Nucl. Instrum. Meth. Phys. Res. B16, 237 (1986).Google Scholar
6. Wright, R.B. and Gruen, D.M., Radiation Effects 33, 133 (1977).Google Scholar