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Methods to Decrease Defect Density in GaAs/Si Heteroepitaxy

Published online by Cambridge University Press:  25 February 2011

Zuzanna Liliental-Weber
Zuzanna Liliental-Weber*
Affiliation:
Center for Advanced Materials, Lawrence Berkeley Laboratory 62-203, 1 Cyclotron Rd, Berkeley, CA 94720
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Abstract

In this paper, the fundamental mechanisms of procedures improving the structural quality of GaAs grown on Si are discussed. Patterned growth, strained layer superlattices and proper thermal cycling are promising approaches to achieve a high quality of GaAs layers grown on Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 205
Copyright
Copyright © Materials Research Society 1989

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