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Metastable Variations of the Fill Factor in CIGS Thin Film Solar Cells

Published online by Cambridge University Press:  31 January 2011

Aleksander Urbaniak  and
Małgorzata Igalson
Aleksander Urbaniak
Affiliation:
[email protected], Warsaw University of Technology, Faculty of Physics, Warsaw, Poland
Małgorzata Igalson
Affiliation:
Mał[email protected], Warsaw University of Technology, Faculty of Physics, Warsaw, Poland
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Abstract

We investigate the origin of fill factor changes induced by reverse bias treatment. Evolution of current-voltage characteristics have been measured during application of reverse voltage bias. Two different cell behaviors have been identified. At elevated temperatures one kind of the devices strongly deteriorates and exhibit so called double diode behavior. On the other hand, in the same conditions another cells keep their fill factor almost constant. We correlate the fill factor changes with the kinetics of capacitance and show that although increased number of shallow acceptors itself cannot induce this severe FF deterioration, it may strongly influence position of the Fermi level at the heterointerface that in a presence of an electron barrier is crucial for the device behavior.

Keywords

thin filmdefectsphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M01-08
Copyright
Copyright © Materials Research Society 2009

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