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Metastable Structures Formed in Plasma Source Ion Processing

Published online by Cambridge University Press:  25 February 2011

Xiao-Ci zheng ,
R. A. Dodd  and
J. R. Conrad
Xiao-Ci zheng
Affiliation:
Materials Science Center & Plasma Source Ion Implantation Group, University of Wisconsin-Madison, Madison, WI 53706
R. A. Dodd
Affiliation:
Materials Science Center & Plasma Source Ion Implantation Group, University of Wisconsin-Madison, Madison, WI 53706
J. R. Conrad
Affiliation:
Materials Science Center & Plasma Source Ion Implantation Group, University of Wisconsin-Madison, Madison, WI 53706
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Abstract

Ni-Ti films were bombarded by plasma source heavy ions of different ion dose and ion flux. Disc-like non-uniform microstructures were found when the films were irradiated at a dose of 5x1016Kr+/cm2. These “discs” were acting as defect centers. The development of “discs” depended on the plasma ion flux during the pulse. Target geometry appeared to have effects on the density of “discs”.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 847
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Conrad, J. R., Radtke, J. L., Dodd, R. A., Worzala, F. J., and Tran, N. C., J. Appl. Phys. 62, 459 (1987)Google Scholar
2 Conrad., J. R., J. Appl. Phys. 62, 777 (1987)Google Scholar
3 Sakata, T., Fujita., H. and Sumida., , Inst. Phys. Conf. Ser. 90, 171 (1987)Google Scholar
4 Mori, H. and Fujita., H., Jpn. J. Appl. Phys. 21, L494 (1982)Google Scholar
5 Biimhall, J. L., Kissinger, H. E., and Pelton, A. R. In Ion Implantation and Ion Beam Processing of Materials, ed. by Hubler, G. K., Clayton, C. R., Holland, O. W., and White, C. W.(North-Holland, New York, 1984). p. 163 Google Scholar
6 Biimhall, J. L. and Simonen., E. P., Nucl. Inst. & Meth., B16, 187 (1986)Google Scholar
7 Martin, G. and Bellon., P., Mat. Sci. Forum. 15–18, 1337 (1987)Google Scholar
8 Lam, N. Q. and Wiedersich, H., Nucl. Inst. & Meth, B18, 471 (1987)Google Scholar
9 Rehn, L. E. and Wiedersich, H., in Surface Alloying by Ion. Electron, and Laser Beams, ed. by Rehn, L. E., Picraux, S. T., and Wiedersich, H. (ASM, Ohio, 1987), p. 137 Google Scholar
10 Hashimoto, T., Rehn, L. E., and Okamoto, P. R., Phys. Review B, Vol. 38, 18, 12868 (1988)Google Scholar
11 Rehn, L. E., in Metastable Materials Formation by Ion Implantation, ed. by Picraux, S. and Choyke, W. J. (Elsevier Science Publishing Company. Inc., 1982), p. 17 Google Scholar
12 Qiu, X. -H., Conrad, J. R., Dodd, R. A., and Worzala, F. J., presented at the TMS Fall Meeting. Chicago. IL. Sept. 1988. (to be published)Google Scholar
13 Elder, J. E., Thamburaj, R., and Patnaik, P. C., Intern. Mat. Rev., 33, 289 (1988)Google Scholar