Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-19T11:15:43.765Z Has data issue: false hasContentIssue false
  • English
  • Français

Metastable Defects of Iron-Boron Pair in Silicon

Published online by Cambridge University Press:  03 September 2012

H. Nakashima  and
T. Sadoh
H. Nakashima
Affiliation:
Department of Electrical Engineering, Kyushu University, 6–10–1 Uakozaki, Higashi-ku, Fukuoka 812, Japan
T. Sadoh
Affiliation:
Department of Electrical Engineering, Kyushu University, 6–10–1 Uakozaki, Higashi-ku, Fukuoka 812, Japan
Get access

Abstract

We have found configuratlonally metastable Fe-B pairs in Si by using dark or photo capacitance-transient technique combined with minority-carrier injection. The metastable pairs are observed as four electron-trapping levels at Ec-0.43 eV, 0.46 eV, 0.52 eV, and 0.54 eV and as two hole-trapping levels at Ev+0.53 eV and 0.48 eV after the injection at 150 K. The production of each level is investigated under various injection conditions, and the annihilation process is studied by isochronal anneals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 555
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Graff, K. and Pieper, H., J. Electrochem. Soc. 128, 669 (1981).Google Scholar
2. Kimerling, L. C. and Benton, J. L., Physica B 116, 297 (1983).Google Scholar
3. Nakashlma, H., Isobe, T., Yamamoto, Y., and Hashimoto, H., Jpn. J. Appl. Phys. 27, 1542 (1988).CrossRefGoogle Scholar
4. Mesll, A., Heiser, T., Amroun, N., and Siffert, P., Appl. Phys. Lett. 57, 1898 (1990).Google Scholar
5. Chantre, A. and Bois, D., Phys. Rev. B 31, 7979 (1985).Google Scholar
6. Chantre, A. and Kimerling, L. C., Mat. Sci. Forum, 10–12, 387 (1986).Google Scholar
7. Gehlhoff, W. and Segsa, K. H., Phys. Status Solidi B 115, 443 (1983).Google Scholar
8. Lemke, H., Phys. Status Solidi A 64, 215 (1981).CrossRefGoogle Scholar
9. Brotherton, S. D., Bradley, P., and Gill, A., J. Appl. Phys. 57, 1941 (1985).CrossRefGoogle Scholar
10. Nakashima, H., to be published.Google Scholar
11. Brotherton, S. D., J. Appl. Phys. 55, 3636 (1984).Google Scholar
12. Grimmeiss, H. G. and Ovrén, C., J. Phys. E 14, 1032 (1981).Google Scholar