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Metastable Alloy Formation in Electron Beam Pulsed Al and Siϯ

Published online by Cambridge University Press:  15 February 2011

S. T. Picraux ,
D. M. Follstaedt ,
J. A. Knapp ,
W. R. Wampler  and
E. Rimini
S. T. Picraux
Affiliation:
Sandia National Laboratories*, P. O. Box 5800, Albuquerque, NM 87185USA
D. M. Follstaedt
Affiliation:
Sandia National Laboratories*, P. O. Box 5800, Albuquerque, NM 87185USA
J. A. Knapp
Affiliation:
Sandia National Laboratories*, P. O. Box 5800, Albuquerque, NM 87185USA
W. R. Wampler
Affiliation:
Sandia National Laboratories*, P. O. Box 5800, Albuquerque, NM 87185USA
E. Rimini
Affiliation:
Sandia National Laboratories*, P. O. Box 5800, Albuquerque, NM 87185USA
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Abstract

The formation of metastable alloys by pulsed electron beam annealing of Al implanted with Sn or Ni and of Si implanted with Sn has been studied by TEM, ion backscattering and channeling. Surface segregation after pulsed melting is observed in Si but not in Al, even though all impurities have similar equilibrium distribution coefficients of∼10-2. This difference is attributed to the higher liquid-solid interface velocity and lower diffusivities in Al. Metastable substitutional solutions more than an order of magnitude above equilibrium solubilities are obtained for Ni and Sn in Al. At Ni concentrations ∼ 5 at.% a highly disordered transformation zone is formed in Al and a new phenomenon in which a polycrystalline layer forms on epitaxially regrown Al is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 575
Copyright
Copyright © Materials Research Society 1981

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Footnotes

*

A U.S. Department of Energy Facility.

§

Permanent address: Catania University, Catania, Italy.

ϯ

This work supported by the U.S. Department of Energy, DOE, under contract No. DE-AC04-76-DP00789.

References

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