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Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts

Published online by Cambridge University Press:  01 February 2011

Jason L. Johnson ,
Ashkan Behnam ,
Yongho Choi ,
Leila Noriega ,
Gunhan Ertosun ,
Zhuangchun Wu ,
Andrew G. Rinzler ,
Pawan Kapur ,
Krishna C. Saraswat  and
Ant Ural
Jason L. Johnson
Affiliation:
[email protected], University of Florida, Electrical and Computer Engineering, 530 ENG Bldg. #33, Gainesville, FL, 32611, United States
Ashkan Behnam
Affiliation:
[email protected], University of Florida, Electrical and Computer Engineering, Gainesville, FL, 32611, United States
Yongho Choi
Affiliation:
[email protected], University of Florida, Electrical and Computer Engineering, Gainesville, FL, 32611, United States
Leila Noriega
Affiliation:
[email protected], University of Florida, Electrical and Computer Engineering, Gainesville, FL, 32611, United States
Gunhan Ertosun
Affiliation:
[email protected], Stanford University, Department of Electrical Engineering, Stanford, CA, 94305, United States
Zhuangchun Wu
Affiliation:
[email protected], University of Florida, Department of Physics, Gainesville, FL, 32611, United States
Andrew G. Rinzler
Affiliation:
[email protected], University of Florida, Department of Physics, Gainesville, FL, 32611, United States
Pawan Kapur
Affiliation:
[email protected], Stanford University, Department of Electrical Engineering, Stanford, CA, 94305, United States
Krishna C. Saraswat
Affiliation:
[email protected], Stanford University, Department of Electrical Engineering, Stanford, CA, 94305, United States
Ant Ural
Affiliation:
[email protected], University of Florida, Electrical and Computer Engineering, Gainesville, FL, 32611, United States
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Abstract

We experimentally study the dark and photocurrent in metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film Schottky contacts on GaAs. We find that above ∼260°K, thermionic emission of electrons with a barrier height of ∼0.54 eV is the dominant dark current transport mechanism. Furthermore, MSM devices with CNT film electrodes exhibit a higher photocurrent-to-dark current ratio while maintaining a comparable responsivity relative to control devices. This work demonstrates that nanotube films can be integrated as Schottky electrodes in conventional semiconductor optoelectronic devices.

Keywords

semiconductingelectrical propertiesphotoconductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1057: Symposium II – Nanotubes and Related Nanostructures , 2007 , 1057-II22-05
Copyright
Copyright © Materials Research Society 2008

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References

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