Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-26T03:31:12.685Z Has data issue: false hasContentIssue false
  • English
  • Français

Metal/Porous Silicon Schottky Diode Structures as Sensors

Published online by Cambridge University Press:  01 February 2011

Tayyar Dzhafarov ,
Cigdem Oruc Lus ,
Sureyya AYDIN  and
Emel Cingi
Tayyar Dzhafarov
Affiliation:
[email protected] Technical UniversityPhysicsDavutpasaIstanbul N/A34210Turkey
Cigdem Oruc Lus
Affiliation:
[email protected], Yildiz Technical University, Physics, Davutpasa, Istanbul, N/A, 34210, Turkey
Sureyya AYDIN
Affiliation:
[email protected], Yildiz Technical University, Physics, Davutpasa, Istanbul, N/A, 34210, Turkey
Emel Cingi
Affiliation:
[email protected], Yildiz Technical University, Physics, Davutpasa, Istanbul, N/A, 34210, Turkey
Get access

Abstract

In this work we present data on investigation of the current-voltage and capacitance characteristics of Au/PS Schottky type structures in the presence of different hydrogen-containing solutions (glucose, ethanol, methanol, boric acid, sodium tetraborate pentahydrate, sodium borohydride, benzine, KOH). Generation of the open-circuit voltage and short-circuit current density and capacitance up to 0.55 V, 25 mA/cm2 and 1μF respectively on placing of Au/PS structures in these solutions was discovered. This effect is mainly caused by hydrogen component of solutions. The possible mechanism generation of voltage and capacitance in metal/PS sensors hydrogen-containing solutions is suggested. The advantage of metal/PS Schottky type sensors consists in working without applying external electricity.

Keywords

diffusionsensorSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 915: Symposium R – Nanostructured Materials and Hybrid Composites for Gas Sensors and Biomedical Applications , 2006 , 0915-R06-13
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Baratto, C., Faglia, G., Comini, E., Sberveglieri, G., Taroni, A., Ferrara, V. La, Quereia, L., Francia, G. Di, Sens. Actuators B: Chem. 77, 62 (2001).Google Scholar
[2] Watanabe, K., Okada, T., Choe, I., Sato, Y., Sens. Actuators B: Chem. 33, 194 (1996).Google Scholar
[3] Stievenard, D., Deresmes, D., Appl. Phys. Lett. 67, 1570 (1995).Google Scholar
[4] Das, J., Hossan, S.M., Chakraborty, S., Saha, H., Sens. Actuators, A 94, 44 (2001).Google Scholar
[5] Foucaran, A., Pascal-Delannay, F., Grani, A., Sackda, A., Combette, P., Boyer, A., Thin Solid Films, 297, 317 (1997).Google Scholar
[6] Watanabe, K., Okada, T., Choe, I., Satoh, Y., “Proc. of the Transducers” 95, Stockholm, Sweden, June 1995.Google Scholar
[7] Dzhafarov, T.D., Can, B., Allahverdiev, Z.A., Surface Science, 482–485, 1141 (2001).Google Scholar
[8] Dzhafarov, T.D., Can, B., Oruc, C., Allahverdiev, Z.A., J. Phys.D: Appl. Phys. 35, 3122 (2002).Google Scholar
[9] Dzhafarov, T.D., Oruc, C., Aydin, S., J. Phys. D: Appl. Phys. 37, 404 (2004).Google Scholar
[10] Ceraolo, M., Miulli, C., Pozio, A., J. Power Sources, 13, 131 (2003).Google Scholar
[11] Hua, D., Hanxi, Y., Xinping, A., Chuansin, C., Intern. J. Hydrogen Energy, 28, 1095 (2003).Google Scholar